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Material Type: Artigo
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Development of MOVPE grown GaSb-on-GaAs interfacial misfit solar cellsKessler-Lewis, Emily S. ; Polly, Stephen J. ; Nelson, George T. ; Slocum, Michael A. ; Pokharel, Nikhil ; Ahrenkiel, Phil ; Hubbard, Seth M.Journal of applied physics, 2023-06, Vol.133 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Role of electron correlations in deoxyribonucleic acid duplexes: is an extended Hubbard Hamiltonian a good model in this case?Starikov, E. B.Philosophical magazine letters, 2003-11, Vol.83 (11), p.699-708 [Periódico revisado por pares]London: Taylor & Francis GroupTexto completo disponível |
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3 |
Material Type: Artigo
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Effective Hamiltonian of the two-band Hubbard model: An exact resultChan, Raymond ; Gulácsi, MiklósPhilosophical magazine letters, 2002-12, Vol.82 (12), p.671-680 [Periódico revisado por pares]London: Taylor & Francis GroupTexto completo disponível |
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4 |
Material Type: Artigo
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Orientations of Al4C3 and Al films grown on GaAs substratesPokharel, Nikhil ; Smaglik, Nathan ; Ahrenkiel, Phil ; Giussani, Alessandro ; Slocum, Michael A. ; Hubbard, Seth M.Materials science in semiconductor processing, 2019-08, Vol.98 (C), p.49-54 [Periódico revisado por pares]Netherlands: Elsevier LtdTexto completo disponível |
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5 |
Material Type: Artigo
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Transitions between Hall plateaux and the dimerization transition of a Hubbard chainLee, Dung-HaiPhilosophical magazine letters, 1996-03, Vol.73 (3), p.145-152 [Periódico revisado por pares]London: Taylor & Francis GroupTexto completo disponível |
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6 |
Material Type: Artigo
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Excitonic states in the one-dimensional Hubbard modelGulacsi, M. ; Bishop, A. R.Philosophical magazine letters, 1998-01, Vol.77 (1), p.59-67 [Periódico revisado por pares]London: Taylor & Francis GroupTexto completo disponível |
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7 |
Material Type: Artigo
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Ground state of the large-U Hubbard model in the large-n limit for triangular and honeycomb latticesVoon, Lok C. Lew YanPhilosophical magazine letters, 1991-09, Vol.64 (3), p.153-156 [Periódico revisado por pares]London: Taylor & Francis GroupTexto completo disponível |
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8 |
Material Type: Ata de Congresso
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Development of GaSb solar cells on GaAs by MOVPE via interface misfit techniqueSlocum, Michael A. ; Giussani, Alessandro ; Kessler, Emily ; Ahrenkiel, Phil ; Nelson, George T. ; Hubbard, Seth M.2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017, p.206-209IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Metal-insulator transition in a generalized Hubbard model with bond-charge interactionSun, TaoPhilosophical magazine letters, 1996-04, Vol.73 (4), p.201-208 [Periódico revisado por pares]London: Taylor & Francis GroupTexto completo disponível |
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10 |
Material Type: Artigo
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Exact ground states for the four-electron problem in a Hubbard ladderKOVACS, E ; GULACSI, ZPhilosophical magazine (2003. Print), 2006-05, Vol.86 (13-14), p.1997-2009 [Periódico revisado por pares]Abingdon: Taylor & Francis GroupTexto completo disponível |