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Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept
Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept
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Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept

Kalosha, V P ; Posilovic, K ; Kettler, T ; Shchukin, V A ; Ledentsov, N N ; Bimberg, D

Semiconductor science and technology, 2011-07, Vol.26 (7), p.075014 [Periódico revisado por pares]

Bristol: IOP Publishing

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2
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
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Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots

Strittmatter, A. ; Germann, T.D. ; Kettler, Th ; Posilovic, K. ; Pohl, J. ; Pohl, U.W. ; Bimberg, D.

Journal of crystal growth, 2008-11, Vol.310 (23), p.5066-5068 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm
MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm
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MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm

Germann, T.D. ; Strittmatter, A. ; Kettler, Th ; Posilovic, K. ; Pohl, U.W. ; Bimberg, D.

Journal of crystal growth, 2007, Vol.298, p.591-594 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths
Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths
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Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths

Kaiander, I.N. ; Hopfer, F. ; Kettler, T. ; Pohl, U.W. ; Bimberg, D.

Journal of crystal growth, 2004-12, Vol.272 (1), p.154-160 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Synthesis and characterization of oxorhenium(V)-catecholate complexes. Crystal and molecular structures of (CH3)4N[ReO(O2C6H4)2] and (CH3)4N[ReO(PPh3)(O2C6H4)2].CH3OH
Synthesis and characterization of oxorhenium(V)-catecholate complexes. Crystal and molecular structures of (CH3)4N[ReO(O2C6H4)2] and (CH3)4N[ReO(PPh3)(O2C6H4)2].CH3OH
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Synthesis and characterization of oxorhenium(V)-catecholate complexes. Crystal and molecular structures of (CH3)4N[ReO(O2C6H4)2] and (CH3)4N[ReO(PPh3)(O2C6H4)2].CH3OH

KETTLER, P. B ; YUAN-DA CHANG ; ZUBIETA, J ; ABRAMS, M. J

Inorganica Chimica Acta, 1994-04, Vol.218 (1-2), p.157-165 [Periódico revisado por pares]

Lausanne: Elsevier Science

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6
Frequency dependence of the ac susceptibility in the random anisotropy system Dy(P1-xVx)O4
Frequency dependence of the ac susceptibility in the random anisotropy system Dy(P1-xVx)O4
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Frequency dependence of the ac susceptibility in the random anisotropy system Dy(P1-xVx)O4

DIRKMAAT, A. J ; HÜSER, D ; NIEUWENHUYS, G. J ; MYDOSH, J. A ; KETTLER, P ; STEINER, M

Physical review. B, Condensed matter, 1987-07, Vol.36 (1), p.352-359

Woodbury, NY: American Physical Society

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