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1 |
Material Type: Artigo
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1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing areaMiah, M. J. ; Kettler, T. ; Posilovic, K. ; Kalosha, V. P. ; Skoczowsky, D. ; Rosales, R. ; Bimberg, D. ; Pohl, J. ; Weyers, M.Applied physics letters, 2014-10, Vol.105 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal WaveguideMaximov, M.V. ; Shernyakov, Y.M. ; Novikov, I.I. ; Karachinsky, L.Ya ; Gordeev, N.Yu ; Ben-Ami, U. ; Bortman-Arbiv, D. ; Sharon, A. ; Shchukin, V.A. ; Ledentsov, N.N. ; Kettler, T. ; Posilovic, K. ; Bimberg, D.IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1113-1122 [Periódico revisado por pares]New York: IEEETexto completo disponível |
3 |
Material Type: Artigo
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High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode ArraysKettler, T. ; Posilovic, K. ; Karachinsky, L.Ya ; Ressel, P. ; Ginolas, A. ; Fricke, J. ; Pohl, U.W. ; Shchukin, V.A. ; Ledentsov, N.N. ; Bimberg, D. ; Jonsson, J. ; Weyers, M. ; Erbert, G. ; Trankle, G.IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.901-908 [Periódico revisado por pares]New York: IEEETexto completo disponível |
4 |
Material Type: Artigo
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Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser conceptKalosha, V P ; Posilovic, K ; Kettler, T ; Shchukin, V A ; Ledentsov, N N ; Bimberg, DSemiconductor science and technology, 2011-07, Vol.26 (7), p.075014 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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Material Type: Artigo
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MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μmGermann, T.D. ; Strittmatter, A. ; Kettler, Th ; Posilovic, K. ; Pohl, U.W. ; Bimberg, D.Journal of crystal growth, 2007, Vol.298, p.591-594 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
6 |
Material Type: Artigo
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Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengthsKaiander, I.N. ; Hopfer, F. ; Kettler, T. ; Pohl, U.W. ; Bimberg, D.Journal of crystal growth, 2004-12, Vol.272 (1), p.154-160 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |