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Resultados de 1 a 10 de 20  para Produção Intelectual da USP

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Refinado por: autor: Quivy, A remover idioma: Inglês remover Silva, M remover
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1
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces

A. A. Quivy (Alain André) S Martini; T. E Lamas (Tomás Erikson); M. J. da Silva; Euzi Conceicao Fernandes da Silva; Brazilian Workshop on Semiconductor Physics (11. 2003 Fortaleza)

Book of Abstract Fortaleza : DF/UFC, 2003

Fortaleza DF/UFC 2003

Item não circula. Consulte sua biblioteca.(Acessar)

2
Large InAs/GaAs quantum dots optically active in the long-wavelength region
Large InAs/GaAs quantum dots optically active in the long-wavelength region
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Large InAs/GaAs quantum dots optically active in the long-wavelength region

M J da Silva S Martini; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto); International Conference on Defects in Semiconductors (22. 2003 Aarhus)

Book of Abstracts Amsterdam : Elsevier Science, 2003

Amsterdam Elsevier Science 2003

Item não circula. Consulte sua biblioteca.(Acessar)

3
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003

Amsterdam 2003

Acesso online

4
InAs/GaAs quantum dots optically active at 1.5 'mu'
InAs/GaAs quantum dots optically active at 1.5 'mu'
Material Type:
Artigo 		Adicionar ao Meu Espaço

InAs/GaAs quantum dots optically active at 1.5 'mu'

M J da Silva A. A Quivy (Alain André); S Martini; T E Lamas; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Applied Physics Letters Woodbury v. 82, n. 16, p. 2646-2648, 2003

Woodbury 2003

Acesso online

5
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
Material Type:
Artigo 		Adicionar ao Meu Espaço

Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix

M J da Silva A. A Quivy (Alain André); S Martini; T. E Lamas (Tomás Erikson); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 181-185, 2003

Amsterdam 2003

Acesso online

6
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm

M J da Silva S Martini; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 631-633, 2003

Oxford 2003

Acesso online

7
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
Material Type:
Artigo 		Adicionar ao Meu Espaço

Large InAs/GaAs quantum dots with an optical response in the long-wavelength region

M J da Silva A. A Quivy (Alain André); S Martini; T. E Lamas (Tomás Erikson); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 278, p. 103-107, 2005

Amsterdam 2005

Item não circula. Consulte sua biblioteca.(Acessar)

8
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003

Amsterdam 2003

Acesso online

9
InAs/GaAs quantum dots optically active at 1.5 'mu'
InAs/GaAs quantum dots optically active at 1.5 'mu'
Material Type:
Artigo 		Adicionar ao Meu Espaço

InAs/GaAs quantum dots optically active at 1.5 'mu'

M J da Silva A. A Quivy (Alain André); S Martini; T E Lamas; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Applied Physics Letters Woodbury v. 82, n. 16, p. 2646-2648, 2003

Woodbury 2003

Acesso online

10
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
Material Type:
Artigo 		Adicionar ao Meu Espaço

Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix

M J da Silva A. A Quivy (Alain André); S Martini; T. E Lamas (Tomás Erikson); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 181-185, 2003

Amsterdam 2003

Acesso online

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Deste Autor:

  1. Silva, E
  2. Silva, M
  3. Quivy, A
  4. Martini, S
  5. Leite, J

Neste Assunto:

  1. Estrutura Eletrônica
  2. Semicondutores
  3. Fotoluminescência
  4. Difração Por Raios X
  5. Superfície Física

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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