Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Electronic properties of gated 'DELTA'-doped semiconductorsL. C. D. Gonçalves André Bohomoletz HenriquesLondon v.12, p.203-9, 1997 Semiconductor Science and TechnologyLondon 1997Item não circula. Consulte sua biblioteca.(Acessar) |
2 |
Material Type: Artigo
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Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'André Bohomoletz Henriques L. C. D GonçalvesLondres v.8 , n.4 , p.585-9, abr. 1993 Semiconductor Science and TechnologyLondres 1993Item não circula. Consulte sua biblioteca.(Acessar) |
3 |
Material Type: Artigo
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Electronic properties of gated 'DELTA'-doped semiconductorsL. C. D. Gonçalves André Bohomoletz HenriquesLondon v.12, p.203-9, 1997 Semiconductor Science and TechnologyLondon 1997Item não circula. Consulte sua biblioteca.(Acessar) |
4 |
Material Type: Artigo
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Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profilingL. C. D. Gonçalves André Bohomoletz Henriques; P. L Souza; B YavichSemiconductor Science and Technology Bristol v. 12, p. 1455-1458, 1997Bristol 1997Item não circula. Consulte sua biblioteca.(Acessar) |
5 |
Material Type: Artigo
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Characterization of delta-doped superlattices by shubnikov-de haas measurementsAndré Bohomoletz Henriques L. C. D Gonçalves; P. L Souza; B YavichLondon v.11, p.190-5, 1996 Semiconductor Science and TechnologyLondon 1996Item não circula. Consulte sua biblioteca.(Acessar) |
6 |
Material Type: Artigo
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Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profilingL. C. D. Gonçalves André Bohomoletz Henriques; P. L Souza; B YavichSemiconductor Science and Technology Bristol v. 12, p. 1455-1458, 1997Bristol 1997Item não circula. Consulte sua biblioteca.(Acessar) |
7 |
Material Type: Artigo
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Characterization of delta-doped superlattices by shubnikov-de haas measurementsAndré Bohomoletz Henriques L. C. D Gonçalves; P. L Souza; B YavichLondon v.11, p.190-5, 1996 Semiconductor Science and TechnologyLondon 1996Item não circula. Consulte sua biblioteca.(Acessar) |
8 |
Material Type: Artigo
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Single and periodically Si Delta-doped Inp grown by Lp-movpeB Yavich P. L Souza; M Pamplona-Pires; André Bohomoletz Henriques; L. C. D GonçalvesSemiconductor Science and Technology v. 12, p. 481-484, 19971997Item não circula. Consulte sua biblioteca.(Acessar) |
9 |
Material Type: Artigo
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Electronic properties of gated δ-doped semiconductorsGONCALVES, L. C. D ; HENRIQUES, A. BSemiconductor science and technology, 1997-02, Vol.12 (2), p.203-209 [Periódico revisado por pares]Bristol: Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Characterization of periodically δ-doped semiconductors by capacitance-voltage profilingGONCALVES, L. C. D ; HENRIQUES, A. B ; SOUZA, P. L ; YAVICH, BSemiconductor science and technology, 1997-11, Vol.12 (11), p.1455-1458 [Periódico revisado por pares]Bristol: Institute of PhysicsTexto completo disponível |