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Refinado por: Nome da Publicação: Applied Physics Letters remover assunto: Substrates remover
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1
Recent developments, challenges, and pathways to stable dropwise condensation: A perspective
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Recent developments, challenges, and pathways to stable dropwise condensation: A perspective

Ma, Jingcheng ; Sett, Soumyadip ; Cha, Hyeongyun ; Yan, Xiao ; Miljkovic, Nenad

Applied physics letters, 2020-06, Vol.116 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Strong effect of crystal structure on the proximity effect between a superconductor and monolayer of cobalt
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Strong effect of crystal structure on the proximity effect between a superconductor and monolayer of cobalt

Mougel, Loic ; Buhl, Patrick M. ; Li, Qili ; Müller, Anika ; Yang, Hung-Hsiang ; Verstraete, Matthieu J. ; Simon, Pascal ; Dupé, Bertrand ; Wulfhekel, Wulf

Applied physics letters, 2022-12, Vol.121 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Fabrication of non-polar GaN based highly responsive and fast UV photodetector
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Fabrication of non-polar GaN based highly responsive and fast UV photodetector

Gundimeda, Abhiram ; Krishna, Shibin ; Aggarwal, Neha ; Sharma, Alka ; Sharma, Nita Dilawar ; Maurya, K. K. ; Husale, Sudhir ; Gupta, Govind

Applied physics letters, 2017-03, Vol.110 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors
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Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors

Wu, Chao ; Wu, Fengmin ; Hu, Haizheng ; Ma, Chaoqun ; Ye, Junhao ; Wang, Shunli ; Wu, Huaping ; Wang, Jinbin ; Liu, Aiping ; Guo, Daoyou

Applied physics letters, 2022-03, Vol.120 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Singh Pratiyush, Anamika ; Krishnamoorthy, Sriram ; Vishnu Solanke, Swanand ; Xia, Zhanbo ; Muralidharan, Rangarajan ; Rajan, Siddharth ; Nath, Digbijoy N.

Applied physics letters, 2017-05, Vol.110 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
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Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

Hu, Zongyang ; Nomoto, Kazuki ; Song, Bo ; Zhu, Mingda ; Qi, Meng ; Pan, Ming ; Gao, Xiang ; Protasenko, Vladimir ; Jena, Debdeep ; Xing, Huili Grace

Applied physics letters, 2015-12, Vol.107 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces
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Terahertz sensing of 7 nm dielectric film with bound states in the continuum metasurfaces

Srivastava, Yogesh Kumar ; Ako, Rajour Tanyi ; Gupta, Manoj ; Bhaskaran, Madhu ; Sriram, Sharath ; Singh, Ranjan

Applied physics letters, 2019-10, Vol.115 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
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Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

Zhang, Z. ; Farzana, E. ; Arehart, A. R. ; Ringel, S. A.

Applied physics letters, 2016-02, Vol.108 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Acceptor doping of β-Ga2O3 by Mg and N ion implantations
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Acceptor doping of β-Ga2O3 by Mg and N ion implantations

Wong, Man Hoi ; Lin, Chia-Hung ; Kuramata, Akito ; Yamakoshi, Shigenobu ; Murakami, Hisashi ; Kumagai, Yoshinao ; Higashiwaki, Masataka

Applied physics letters, 2018-09, Vol.113 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes
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Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes

Li, Wenshen ; Saraswat, Devansh ; Long, Yaoyao ; Nomoto, Kazuki ; Jena, Debdeep ; Xing, Huili Grace

Applied physics letters, 2020-05, Vol.116 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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