Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'S C P Rodrigues A L Rosa; Luísa Maria Ribeiro Scolfaro; Dmitri Beliaev; J. R Leite (José Roberto); R Enderlein; J L A AlvesSemiconductor Science and Technology v. 13, p. 981-988, 19981998Item não circula. Consulte sua biblioteca.(Acessar) |
2 |
Material Type: Artigo
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Photoreflectance spectra from GaAs HEMT structures reinvestigated solution of an old controversyJ A N T Soares R Enderlein; D Beliaev; J. R Leite (José Roberto); M SaitoSemiconductor Science and Technology London v. 13, n. 12, p. 1418-1425, 1998London 1998Item não circula. Consulte sua biblioteca.(Acessar) |
3 |
Material Type: Artigo
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Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrateA. Tabata A. P Lima; J. R Leite (José Roberto); V Lemos; D Schikora; B Schottker; U Kohler; D. J As; K LischkaSemiconductor Science and Technology Bristol v. 14, n. 4, p. 318-322, 1999Bristol 1999Item não circula. Consulte sua biblioteca.(Acessar) |
4 |
Material Type: Artigo
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New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structuresD Beliaev L M R Scolfaro; J. R Leite (José Roberto)v.8 , p.1479, 1993 Semiconductor Science and Technology1993Item não circula. Consulte sua biblioteca.(Acessar) |
5 |
Material Type: Artigo
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Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrateD G Pacheco-Salazar J. R Leite (José Roberto); F Cerdeira; E A Meneses; S F Li; D J As; K LischkaSemiconductor Science and Technology v. 21, n. 7, p. 846-851, 2006Bristol 2006Acesso online |
6 |
Material Type: Artigo
|
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Photoreflectance spectra from GaAs HEMT structures reinvestigated solution of an old controversyJ A N T Soares R Enderlein; D Beliaev; J. R Leite (José Roberto); M SaitoSemiconductor Science and Technology London v. 13, n. 12, p. 1418-1425, 1998London 1998Item não circula. Consulte sua biblioteca.(Acessar) |
7 |
Material Type: Artigo
|
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Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrateA. Tabata A. P Lima; J. R Leite (José Roberto); V Lemos; D Schikora; B Schottker; U Kohler; D. J As; K LischkaSemiconductor Science and Technology Bristol v. 14, n. 4, p. 318-322, 1999Bristol 1999Item não circula. Consulte sua biblioteca.(Acessar) |
8 |
Material Type: Artigo
|
![]() |
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structuresD Beliaev L M R Scolfaro; J. R Leite (José Roberto)v.8 , p.1479, 1993 Semiconductor Science and Technology1993Item não circula. Consulte sua biblioteca.(Acessar) |
9 |
Material Type: Artigo
|
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Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'S C P Rodrigues A L Rosa; Luísa Maria Ribeiro Scolfaro; Dmitri Beliaev; J. R Leite (José Roberto); R Enderlein; J L A AlvesSemiconductor Science and Technology v. 13, p. 981-988, 19981998Item não circula. Consulte sua biblioteca.(Acessar) |
10 |
Material Type: Artigo
|
![]() |
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrateD G Pacheco-Salazar J. R Leite (José Roberto); F Cerdeira; E A Meneses; S F Li; D J As; K LischkaSemiconductor Science and Technology v. 21, n. 7, p. 846-851, 2006Bristol 2006Acesso online |