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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Current status of Ga2O3 power devicesHigashiwaki, Masataka ; Murakami, Hisashi ; Kumagai, Yoshinao ; Kuramata, AkitoJapanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 2 |
Material Type: Artigo
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Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6Zhang, Xiao ; Zhao, Yuelei ; Song, Qi ; Jia, Shuang ; Shi, Jing ; Han, WeiJapanese Journal of Applied Physics, 2016-03, Vol.55 (3) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 3 |
Material Type: Artigo
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Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devicesFujita, Shizuo ; Oda, Masaya ; Kaneko, Kentaro ; Hitora, ToshimiJapanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.1202 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 4 |
Material Type: Artigo
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Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materialsOnodera, Momoko ; Masubuchi, Satoru ; Moriya, Rai ; Machida, TomokiJapanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.10101 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
| 5 |
Material Type: Artigo
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AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operationKuzuhara, Masaaki ; Asubar, Joel T. ; Tokuda, HirokuniJapanese Journal of Applied Physics, 2016-07, Vol.55 (7), p.70101 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 6 |
Material Type: Artigo
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Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN InterfaceMizue, Chihoko ; Hori, Yujin ; Miczek, Marcin ; Hashizume, TamotsuJpn J Appl Phys, 2011-02, Vol.50 (2), p.021001-021001-7 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 7 |
Material Type: Artigo
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Material science and device physics in SiC technology for high-voltage power devicesKimoto, TsunenobuJapanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.40103-1-040103-27 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 8 |
Material Type: Artigo
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Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacksNishimura, Tomonori ; Xu, Lun ; Shibayama, Shigehisa ; Yajima, Takeaki ; Migita, Shinji ; Toriumi, AkiraJapanese Journal of Applied Physics, 2016-06, Vol.55 (8S2) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 9 |
Material Type: Artigo
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Homoepitaxial growth of beta gallium oxide films by mist chemical vapor depositionLee, Sam-dong ; Kaneko, Kentaro ; Fujita, ShizuoJapanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.1202 [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
| 10 |
Material Type: Artigo
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Quenching effects for piezoelectric properties on lead-free (Bi1/2Na1/2)TiO3 ceramicsMuramatsu, Hiroki ; Nagata, Hajime ; Takenaka, TadashiJapanese Journal of Applied Physics, 2016-10, Vol.55 (10S) [Periódico revisado por pares]The Japan Society of Applied PhysicsTexto completo disponível |
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