Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Temperature evolution of defects and atomic ordering in Si1−xGex islands on Si(001)Malachias, A ; Stoffel, M ; Merdzhanova, T ; Schmidt, O G ; Renaud, G ; Metzger, T H ; Schülli, T UJournal of applied physics, 2016-02, Vol.119 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Influence of preamorphization on the structural properties of ultrashallow arsenic implants in siliconCapello, L ; Metzger, T H ; Werner, M ; van den Berg, J A ; Servidori, M ; Ottaviano, L ; Bongiorno, C ; Mannino, G ; Feudel, T ; Herden, M ; Holý, VJournal of applied physics, 2006-11, Vol.100 (10), p.103533-103533-10 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Measurement of Si 311 defect properties using x-ray scatteringNordlund, K ; Metzger, T H ; Malachias, A ; Capello, L ; Calvo, P ; Claverie, A ; Cristiano, FJournal of applied physics, 2005-10, Vol.98 (7), p.073529-073529-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Structural study of self-assembled Co nanoparticlesChushkin, Y. ; Ulmeanu, M. ; Luby, S. ; Majkova, E. ; Kostic, I. ; Klang, P. ; Holý, V. ; Bochnı́ček, Z. ; Giersig, M. ; Hilgendorff, M. ; Metzger, T. H.Journal of applied physics, 2003-12, Vol.94 (12), p.7743-7748 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low- k interconnectsWilson, Christopher J ; Croes, Kristof ; Zhao, Chao ; Metzger, Till H ; Zhao, Larry ; Beyer, Gerald P ; Horsfall, Alton B ; O'Neill, Anthony G ; Tőkei, ZsoltJournal of applied physics, 2009-09, Vol.106 (5), p.053524-053524-7 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffractionRodrigues, M S ; Cornelius, T W ; Scheler, T ; Mocuta, C ; Malachias, A ; Magalhães-Paniago, R ; Dhez, O ; Comin, F ; Metzger, T H ; Chevrier, JJournal of applied physics, 2009-11, Vol.106 (10), p.103525-103525-6 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Structural relation between Si and SiC formed by carbon ion implantationEichhorn, F. ; Schell, N. ; Mücklich, A. ; Metzger, H. ; Matz, W. ; Kögler, R.Journal of applied physics, 2002-02, Vol.91 (3), p.1287-1292 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Co layer fragmentation effect on magnetoresistive and structural properties of nanogranular Co/Cu multilayersSpizzo, F ; Ferrero, C ; Mazuelas, A ; Albertini, F ; Casoli, F ; Nasi, L ; Ronconi, F ; Metzger, T HJournal of applied physics, 2009-06, Vol.105 (12), p.123533-123533-10 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Grazing incidence small angle x-ray scattering from free-standing nanostructuresRauscher, Markus ; Paniago, Rogerio ; Metzger, Hartmut ; Kovats, Zoltan ; Domke, Jan ; Peisl, Johann ; Pfannes, Hans-Dieter ; Schulze, Jörg ; Eisele, IgnazJournal of applied physics, 1999-12, Vol.86 (12), p.6763-6769 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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Depth-resolved measurement of lattice relaxation in Ga1-xInxAs/GaAs strained layer superlattices by means of grazing-incidence x-ray diffractionPIETSCH, U ; METZGER, H ; RUGEL, S ; JENICHEN, B ; ROBINSON, I. KJournal of applied physics, 1993-08, Vol.74 (4), p.2381-2387 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |