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Refinado por: Nome da Publicação: Journal Of Applied Physics remover
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1
Temperature evolution of defects and atomic ordering in Si1−xGex islands on Si(001)
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Temperature evolution of defects and atomic ordering in Si1−xGex islands on Si(001)

Malachias, A ; Stoffel, M ; Merdzhanova, T ; Schmidt, O G ; Renaud, G ; Metzger, T H ; Schülli, T U

Journal of applied physics, 2016-02, Vol.119 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon
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Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon

Capello, L ; Metzger, T H ; Werner, M ; van den Berg, J A ; Servidori, M ; Ottaviano, L ; Bongiorno, C ; Mannino, G ; Feudel, T ; Herden, M ; Holý, V

Journal of applied physics, 2006-11, Vol.100 (10), p.103533-103533-10 [Periódico revisado por pares]

American Institute of Physics

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3
Measurement of Si 311 defect properties using x-ray scattering
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Measurement of Si 311 defect properties using x-ray scattering

Nordlund, K ; Metzger, T H ; Malachias, A ; Capello, L ; Calvo, P ; Claverie, A ; Cristiano, F

Journal of applied physics, 2005-10, Vol.98 (7), p.073529-073529-5 [Periódico revisado por pares]

American Institute of Physics

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4
Structural study of self-assembled Co nanoparticles
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Structural study of self-assembled Co nanoparticles

Chushkin, Y. ; Ulmeanu, M. ; Luby, S. ; Majkova, E. ; Kostic, I. ; Klang, P. ; Holý, V. ; Bochnı́ček, Z. ; Giersig, M. ; Hilgendorff, M. ; Metzger, T. H.

Journal of applied physics, 2003-12, Vol.94 (12), p.7743-7748 [Periódico revisado por pares]

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5
Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low- k interconnects
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Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low- k interconnects

Wilson, Christopher J ; Croes, Kristof ; Zhao, Chao ; Metzger, Till H ; Zhao, Larry ; Beyer, Gerald P ; Horsfall, Alton B ; O'Neill, Anthony G ; Tőkei, Zsolt

Journal of applied physics, 2009-09, Vol.106 (5), p.053524-053524-7 [Periódico revisado por pares]

American Institute of Physics

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6
In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction
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In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction

Rodrigues, M S ; Cornelius, T W ; Scheler, T ; Mocuta, C ; Malachias, A ; Magalhães-Paniago, R ; Dhez, O ; Comin, F ; Metzger, T H ; Chevrier, J

Journal of applied physics, 2009-11, Vol.106 (10), p.103525-103525-6 [Periódico revisado por pares]

American Institute of Physics

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7
Structural relation between Si and SiC formed by carbon ion implantation
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Structural relation between Si and SiC formed by carbon ion implantation

Eichhorn, F. ; Schell, N. ; Mücklich, A. ; Metzger, H. ; Matz, W. ; Kögler, R.

Journal of applied physics, 2002-02, Vol.91 (3), p.1287-1292 [Periódico revisado por pares]

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8
Co layer fragmentation effect on magnetoresistive and structural properties of nanogranular Co/Cu multilayers
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Co layer fragmentation effect on magnetoresistive and structural properties of nanogranular Co/Cu multilayers

Spizzo, F ; Ferrero, C ; Mazuelas, A ; Albertini, F ; Casoli, F ; Nasi, L ; Ronconi, F ; Metzger, T H

Journal of applied physics, 2009-06, Vol.105 (12), p.123533-123533-10 [Periódico revisado por pares]

United States: American Institute of Physics

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9
Grazing incidence small angle x-ray scattering from free-standing nanostructures
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Grazing incidence small angle x-ray scattering from free-standing nanostructures

Rauscher, Markus ; Paniago, Rogerio ; Metzger, Hartmut ; Kovats, Zoltan ; Domke, Jan ; Peisl, Johann ; Pfannes, Hans-Dieter ; Schulze, Jörg ; Eisele, Ignaz

Journal of applied physics, 1999-12, Vol.86 (12), p.6763-6769 [Periódico revisado por pares]

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10
Depth-resolved measurement of lattice relaxation in Ga1-xInxAs/GaAs strained layer superlattices by means of grazing-incidence x-ray diffraction
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Depth-resolved measurement of lattice relaxation in Ga1-xInxAs/GaAs strained layer superlattices by means of grazing-incidence x-ray diffraction

PIETSCH, U ; METZGER, H ; RUGEL, S ; JENICHEN, B ; ROBINSON, I. K

Journal of applied physics, 1993-08, Vol.74 (4), p.2381-2387 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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