Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Observation of strongly enhanced inverse spin Hall voltage in Fe3Si/GaAs structuresHung, H. Y. ; Chiang, T. H. ; Syu, B. Z. ; Fanchiang, Y. T. ; Lin, J. G. ; Lee, S. F. ; Hong, M. ; Kwo, J.Applied physics letters, 2014-10, Vol.105 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Deep ultraviolet photoluminescence of Tm-doped AlGaN alloysNepal, N. ; Zavada, J. M. ; Lee, D. S. ; Steckl, A. J. ; Sedhain, A. ; Lin, J. Y. ; Jiang, H. X.Applied physics letters, 2009-03, Vol.94 (11), p.111103-111103-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Optical modes within III-nitride multiple quantum well microdisk cavitiesMair, R. A. ; Zeng, K. C. ; Lin, J. Y. ; Jiang, H. X. ; Zhang, B. ; Dai, L. ; Botchkarev, A. ; Kim, W. ; Morkoç, H. ; Khan, M. A.Applied physics letters, 1998-03, Vol.72 (13), p.1530-1532 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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Observation of strongly enhanced inverse spin Hall voltage in Fe{sub 3}Si/GaAs structuresHung, H. Y. ; Kwo, J. ; Chiang, T. H. ; Syu, B. Z. ; Fanchiang, Y. T. ; Hong, M. ; Lin, J. G. ; Lee, S. F.Applied physics letters, 2014-10, Vol.105 (15) [Periódico revisado por pares]United StatesTexto completo disponível |
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5 |
Material Type: Artigo
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Epitaxial EuO thin films on GaAsSwartz, A. G. ; Ciraldo, J. ; Wong, J. J. I. ; Li, Yan ; Han, Wei ; Lin, Tao ; Mack, S. ; Shi, J. ; Awschalom, D. D. ; Kawakami, R. K.Applied physics letters, 2010-09, Vol.97 (11), p.112509-112509-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arraysJuang, Bor-Chau ; Laghumavarapu, Ramesh B. ; Foggo, Brandon J. ; Simmonds, Paul J. ; Lin, Andrew ; Liang, Baolai ; Huffaker, Diana L.Applied physics letters, 2015-03, Vol.106 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistorsChu, R. L. ; Chiang, T. H. ; Hsueh, W. J. ; Chen, K. H. ; Lin, K. Y. ; Brown, G. J. ; Chyi, J. I. ; Kwo, J. ; Hong, M.Applied physics letters, 2014-11, Vol.105 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Effects of Si doping on the ferromagnetic properties of delta doped GaMnN nanorodsWadekar, P. V. ; Xu, C. L. ; Chang, C. W. ; Lin, C. H. ; Yen, J. H. ; Chen, Q. Y. ; Tu, L. W.Applied physics letters, 2020-12, Vol.117 (26) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuationsFrancesco Pecora, Emanuele ; Zhang, Wei ; Yu. Nikiforov, A. ; Zhou, Lin ; Smith, David J. ; Yin, Jian ; Paiella, Roberto ; Dal Negro, Luca ; Moustakas, T. D.Applied physics letters, 2012-02, Vol.100 (6), p.061111-061111-4 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Measurement of electric field across individual wurtzite GaN quantum dots using electron holographyZhou, Lin ; Smith, David J. ; McCartney, Martha R. ; Xu, Tao ; Moustakas, Theodore D.Applied physics letters, 2011-09, Vol.99 (10), p.101905-101905-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |