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Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys
Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys
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Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

Nepal, N. ; Zavada, J. M. ; Lee, D. S. ; Steckl, A. J. ; Sedhain, A. ; Lin, J. Y. ; Jiang, H. X.

Applied physics letters, 2009-03, Vol.94 (11), p.111103-111103-3 [Periódico revisado por pares]

United States: American Institute of Physics

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2
Observation of strongly enhanced inverse spin Hall voltage in Fe{sub 3}Si/GaAs structures
Observation of strongly enhanced inverse spin Hall voltage in Fe{sub 3}Si/GaAs structures
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Observation of strongly enhanced inverse spin Hall voltage in Fe{sub 3}Si/GaAs structures

Hung, H. Y. ; Kwo, J. ; Chiang, T. H. ; Syu, B. Z. ; Fanchiang, Y. T. ; Hong, M. ; Lin, J. G. ; Lee, S. F.

Applied physics letters, 2014-10, Vol.105 (15) [Periódico revisado por pares]

United States

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3
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays
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GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

Juang, Bor-Chau ; Laghumavarapu, Ramesh B. ; Foggo, Brandon J. ; Simmonds, Paul J. ; Lin, Andrew ; Liang, Baolai ; Huffaker, Diana L.

Applied physics letters, 2015-03, Vol.106 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations
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Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

Francesco Pecora, Emanuele ; Zhang, Wei ; Yu. Nikiforov, A. ; Zhou, Lin ; Smith, David J. ; Yin, Jian ; Paiella, Roberto ; Dal Negro, Luca ; Moustakas, T. D.

Applied physics letters, 2012-02, Vol.100 (6), p.061111-061111-4 [Periódico revisado por pares]

United States: American Institute of Physics

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5
Measurement of electric field across individual wurtzite GaN quantum dots using electron holography
Measurement of electric field across individual wurtzite GaN quantum dots using electron holography
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Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Zhou, Lin ; Smith, David J. ; McCartney, Martha R. ; Xu, Tao ; Moustakas, Theodore D.

Applied physics letters, 2011-09, Vol.99 (10), p.101905-101905-3 [Periódico revisado por pares]

United States: American Institute of Physics

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6
Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation
Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation
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Observation of vertical honeycomb structure in InAlN ∕ GaN heterostructures due to lateral phase separation

Zhou, Lin ; Smith, David J. ; McCartney, Martha R. ; Katzer, D. S. ; Storm, D. F.

Applied physics letters, 2007-02, Vol.90 (8), p.081917-081917-3 [Periódico revisado por pares]

United States: American Institute of Physics

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7
Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition
Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition
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Effective passivation of In{sub 0.2}Ga{sub 0.8}As by HfO{sub 2} surpassing Al{sub 2}O{sub 3} via in-situ atomic layer deposition

Chang, Y. H. ; Chiang, T. H. ; Lin, C. A. ; Liu, Y. T. ; Lin, H. Y. ; Huang, M. L. ; Kwo, J. ; Lin, T. D. ; Hong, M. ; Pi, T. W.

Applied physics letters, 2012-10, Vol.101 (17) [Periódico revisado por pares]

United States

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8
Passivation of GaSb using molecular beam epitaxy Y{sub 2}O{sub 3} to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
Passivation of GaSb using molecular beam epitaxy Y{sub 2}O{sub 3} to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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Passivation of GaSb using molecular beam epitaxy Y{sub 2}O{sub 3} to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Chu, R. L. ; Chiang, T. H. ; Hsueh, W. J. ; Chyi, J. I. ; Chen, K. H. ; Lin, K. Y. ; Hong, M. ; Brown, G. J. ; Kwo, J.

Applied physics letters, 2014-11, Vol.105 (18) [Periódico revisado por pares]

United States

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9
Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells
Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells
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Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells

Driscoll, Kristina ; Bhattacharyya, Anirban ; Moustakas, Theodore D. ; Paiella, Roberto ; Zhou, Lin ; Smith, David J.

Applied physics letters, 2007-10, Vol.91 (14) [Periódico revisado por pares]

United States

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10
Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness
Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness
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Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Shao, Lin ; Lin, Yuan ; Swadener, J. G. ; Lee, J. K. ; Jia, Q. X. ; Wang, Y. Q. ; Nastasi, M. ; Thompson, Phillip E. ; Theodore, N. David ; Alford, T. L. ; Mayer, J. W. ; Chen, Peng ; Lau, S. S.

Applied physics letters, 2005-12, Vol.87 (25), p.251907-251907-3 [Periódico revisado por pares]

United States: American Institute of Physics

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