Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Strong hybridization in vanadium oxides: evidence from photoemission and absorption spectroscopyZimmermann, R ; Claessen, R ; Reinert, F ; Steiner, P ; Hüfner, SJournal of physics. Condensed matter, 1998-06, Vol.10 (25), p.5697-5716 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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The electronic structure of PdO found by photoemission (UPS and XPS) and inverse photoemission (BIS)Pillo, Th ; Zimmermann, R ; Steiner, P ; Hüfner, SJournal of physics. Condensed matter, 1997-05, Vol.9 (19), p.3987-3999 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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Electronic structure of 3d-transition-metal oxides: on-site Coulomb repulsion versus covalencyZimmermann, R ; Steiner, P ; Claessen, R ; Reinert, F ; Hüfner, S ; Blaha, P ; Dufek, PJournal of physics. Condensed matter, 1999-02, Vol.11 (7), p.1657-1682 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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4 |
Material Type: Artigo
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Micromachining applications of porous siliconSteiner, P. ; Lang, W.Thin solid films, 1995-01, Vol.255 (1), p.52-58 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Silicon dioxide sacrificial layer etching in surface micromachiningBühler, J ; Steiner, F-P ; Baltes, HJournal of micromechanics and microengineering, 1997-03, Vol.7 (1), p.R1-R13 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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Influence of the spin gap on the normal state transport in YBa2Cu4O8BUCHER, B ; STEINER, P ; KARPINSKI, J ; KALDIS, E ; WACHTER, PPhysical review letters, 1993-03, Vol.70 (13), p.2012-2015 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
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7 |
Material Type: Artigo
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Current-induced light emission from a porous silicon deviceRichter, A. ; Steiner, P. ; Kozlowski, F. ; Lang, W.IEEE electron device letters, 1991-12, Vol.12 (12), p.691-692 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Offset reduction in Hall devices by continuous spinning current methodSteiner, R. ; Maier, Ch ; Hàberli, A. ; Steiner, F.-P. ; Baltes, H.Sensors and actuators. A, Physical, 1998-04, Vol.66 (1), p.167-172 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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The interface of Mn, Fe, Co and Au metal films on NiO( [formula omitted]), investigated by photoemission and low energy electron diffractionde Masi, R ; Reinicke, D ; Müller, F ; Steiner, P ; Hüfner, SSurface science, 2002-09, Vol.515 (2), p.523-537 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Ata de Congresso
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SPHERE Instrumentation Software in the Construction and Integration PhasesBARUFFOLO, A ; BRUNO, P ; ZINS, G ; FANTINEL, D ; FEDRIGO, E ; GLUCK, L ; KIEKEBUSCH, M ; MICALLEF, M ; POPOVIC, D ; SALASNICH, B ; STEINER, PProceedings of SPIE, the International Society for Optical Engineering, 2010, Vol.7740Bellingham, Wash: SPIETexto completo disponível |