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1
Electronic properties of gated 'DELTA'-doped semiconductors
Electronic properties of gated 'DELTA'-doped semiconductors
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Electronic properties of gated 'DELTA'-doped semiconductors

L. C. D. Gonçalves André Bohomoletz Henriques

London v.12, p.203-9, 1997 Semiconductor Science and Technology

London 1997

Item não circula. Consulte sua biblioteca.(Acessar)

2
Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'
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Theoretical investigation of the photoluminescence and fermi surface of periodically delta-dopped 'GA''AS'

André Bohomoletz Henriques L. C. D Gonçalves

Londres v.8 , n.4 , p.585-9, abr. 1993 Semiconductor Science and Technology

Londres 1993

Item não circula. Consulte sua biblioteca.(Acessar)

3
Electronic properties of gated 'DELTA'-doped semiconductors
Electronic properties of gated 'DELTA'-doped semiconductors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electronic properties of gated 'DELTA'-doped semiconductors

L. C. D. Gonçalves André Bohomoletz Henriques

London v.12, p.203-9, 1997 Semiconductor Science and Technology

London 1997

Item não circula. Consulte sua biblioteca.(Acessar)

4
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
Material Type:
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Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling

L. C. D. Gonçalves André Bohomoletz Henriques; P. L Souza; B Yavich

Semiconductor Science and Technology Bristol v. 12, p. 1455-1458, 1997

Bristol 1997

Item não circula. Consulte sua biblioteca.(Acessar)

5
Characterization of delta-doped superlattices by shubnikov-de haas measurements
Characterization of delta-doped superlattices by shubnikov-de haas measurements
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Characterization of delta-doped superlattices by shubnikov-de haas measurements

André Bohomoletz Henriques L. C. D Gonçalves; P. L Souza; B Yavich

London v.11, p.190-5, 1996 Semiconductor Science and Technology

London 1996

Item não circula. Consulte sua biblioteca.(Acessar)

6
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
Material Type:
Artigo 		Adicionar ao Meu Espaço

Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling

L. C. D. Gonçalves André Bohomoletz Henriques; P. L Souza; B Yavich

Semiconductor Science and Technology Bristol v. 12, p. 1455-1458, 1997

Bristol 1997

Item não circula. Consulte sua biblioteca.(Acessar)

7
Characterization of delta-doped superlattices by shubnikov-de haas measurements
Characterization of delta-doped superlattices by shubnikov-de haas measurements
Material Type:
Artigo 		Adicionar ao Meu Espaço

Characterization of delta-doped superlattices by shubnikov-de haas measurements

André Bohomoletz Henriques L. C. D Gonçalves; P. L Souza; B Yavich

London v.11, p.190-5, 1996 Semiconductor Science and Technology

London 1996

Item não circula. Consulte sua biblioteca.(Acessar)

8
Single and periodically Si Delta-doped Inp grown by Lp-movpe
Single and periodically Si Delta-doped Inp grown by Lp-movpe
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Single and periodically Si Delta-doped Inp grown by Lp-movpe

B Yavich P. L Souza; M Pamplona-Pires; André Bohomoletz Henriques; L. C. D Gonçalves

Semiconductor Science and Technology v. 12, p. 481-484, 1997

1997

Item não circula. Consulte sua biblioteca.(Acessar)

9
Electronic properties of gated -doped semiconductors
Electronic properties of gated -doped semiconductors
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Electronic properties of gated -doped semiconductors

Gonçalves, L C D ; Henriques, A B

Semiconductor science and technology, 1997-02, Vol.12 (2), p.203-209 [Periódico revisado por pares]

IOP Publishing

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10
Characterization of periodically -doped semiconductors by capacitance - voltage profiling
Characterization of periodically -doped semiconductors by capacitance - voltage profiling
Material Type:
Artigo 		Adicionar ao Meu Espaço

Characterization of periodically -doped semiconductors by capacitance - voltage profiling

Gonçalves, L C D ; Henriques, A B ; Souza, P L ; Yavich, B

Semiconductor science and technology, 1997-11, Vol.12 (11), p.1455-1458 [Periódico revisado por pares]

IOP Publishing

Texto completo disponível

Citações Citado por

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Deste Autor:

  1. Henriques, A
  2. Gonçalves, L
  3. Yavich, B
  4. Souza, P
  5. Pamplona-Pires, M

Neste Assunto:

  1. Engineering, Electrical & Electronic
  2. Engineering
  3. Matéria Condensada
  4. Physical Sciences
  5. Physics

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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