Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Structure and formation process of the glass film on grain-oriented silicon steel using aluminum nitride as an inhibitorFujii, Hiroyasu ; Yamazaki, Shuichi ; Masui, Hiroaki ; Shiozaki, Morio ; Nagashima, Takeo ; Kobayashi, HisashiJournal of applied physics, 1999-04, Vol.85 (8), p.6016-6018 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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Coherent emission from Ho3+ ions by pumping into the YIG absorption bandStafford, R. G. ; Masui, H. ; Farrow, R. L. ; Chang, R. K. ; van Uitert, L. G.Journal of applied physics, 1976-06, Vol.47 (6), p.2483-2485 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3Okamoto, Eichi ; Masui, Hiromitsu ; Muto, Katsutoshi ; Awazu, KenzoJournal of applied physics, 1972-05, Vol.43 (5), p.2122-2123 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen dopingOnuma, T. ; Nakata, Y. ; Sasaki, K. ; Masui, T. ; Yamaguchi, T. ; Honda, T. ; Kuramata, A. ; Yamakoshi, S. ; Higashiwaki, M.Journal of applied physics, 2018-08, Vol.124 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen dopingAihara, K. ; Takeno, H. ; Hayamizu, Y. ; Tamatsuka, M. ; Masui, T.Journal of applied physics, 2000-09, Vol.88 (6), p.3705-3707 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Effects of magnetic field configuration on thrust performance in a miniature microwave discharge ion thrusterYamamoto, Naoji ; Kondo, Shinya ; Chikaoka, Takayuki ; Nakashima, Hideki ; Masui, HirokazuJournal of applied physics, 2007-12, Vol.102 (12) [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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Electronic properties of the residual donor in unintentionally doped β-Ga2O3Son, N. T. ; Goto, K. ; Nomura, K. ; Thieu, Q. T. ; Togashi, R. ; Murakami, H. ; Kumagai, Y. ; Kuramata, A. ; Higashiwaki, M. ; Koukitu, A. ; Yamakoshi, S. ; Monemar, B. ; Janzén, E.Journal of applied physics, 2016-12, Vol.120 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Thermal management strategies for gallium oxide vertical trench-fin MOSFETsMontgomery, Robert H. ; Zhang, Yuewei ; Yuan, Chao ; Kim, Samuel ; Shi, Jingjing ; Itoh, Takeki ; Mauze, Akhil ; Kumar, Satish ; Speck, James ; Graham, SamuelJournal of applied physics, 2021-02, Vol.129 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodesArmstrong, Andrew M. ; Crawford, Mary H. ; Jayawardena, Asanka ; Ahyi, Ayayi ; Dhar, SaritJournal of applied physics, 2016-03, Vol.119 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropyKneiß, M. ; Splith, D. ; Schlupp, P. ; Hassa, A. ; von Wenckstern, H. ; Lorenz, M. ; Grundmann, M.Journal of applied physics, 2021-08, Vol.130 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |