Resultados de 1 a 10 de 396 para Busca Geral
Ordenado por:
Ordenado por:
RelevânciaOr hit Enter to replace sort method
- Relevância
- Data mais recente
- Data mais antiga
- Mais acessados
- Autor
- Título
| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: magazinearticle
|
|
Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current TransientZheng, Xiang ; Feng, Shiwei ; Zhang, Yamin ; Li, Xuan ; Bai, KunIEEE transactions on device and materials reliability, 2019-09, Vol.19 (3), p.509-513 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 2 |
Material Type: magazinearticle
|
|
电子束辐照对不同品种猕猴桃品质的影响黄天姿 ; 李瑞娟 ; 杨淑霞 ; 张璐 ; 梁锦 ; 王丹 ; 白俊青 ; 罗安伟食品科学, 2022-09, Vol.43 (17), p.297-305 [Periódico revisado por pares]西北农林科技大学食品科学与工程学院,陕西杨凌 712100%杨凌核盛辐照技术有限公司,陕西杨凌 712100Texto completo disponível |
| 3 |
Material Type: magazinearticle
|
|
Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al2O3/Si3N4 Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTsHuang, Jen-Wei ; Chen, Po-Hsun ; Yeh, Tsung-Han ; Tsai, Xin-Ying ; Wu, Pei-YuIEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.510-515 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 4 |
Material Type: magazinearticle
|
|
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field PlateBordoloi, Sushanta ; Ray, Ashok ; Trivedi, GauravIEEE transactions on device and materials reliability, 2022-03, Vol.22 (1), p.73-84 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 5 |
Material Type: magazinearticle
|
|
Mechanisms of Step-Stress Degradation In Carbon-Doped 0.15 μm Algan/Gan Hemts for Power RF ApplicationsZagni, Nicolo ; Gao, Veronica Zhan ; Verzellesi, Giovanni ; Chini, Alessandro ; Pantellini, Alessio ; Natali, Marco ; Lucibello, Andrea ; Latessa, Luca ; Lanzieri, Claudio ; Santi, Carlo De ; Meneghini, Matteo ; Meneghesso, Gaudenzio ; Zanoni, EnricoIEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 6 |
Material Type: magazinearticle
|
|
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTsStockman, Arno ; Canato, Eleonora ; Meneghini, Matteo ; Meneghesso, Gaudenzio ; Moens, Peter ; Bakeroot, BenoitIEEE transactions on device and materials reliability, 2021-06, Vol.21 (2), p.169-175 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 7 |
Material Type: magazinearticle
|
|
New microscope offers quicker data accessReinforced plastics (London), 2021-01, Vol.65 (1), p.34-34 [Periódico revisado por pares]London: Elsevier LtdTexto completo disponível |
| 8 |
Material Type: magazinearticle
|
|
NEW PRODUCTSChemical engineering progress, 2022-12, Vol.118 (12), p.15-18 [Periódico revisado por pares]New York: American Institute of Chemical EngineersTexto completo disponível |
| 9 |
Material Type: magazinearticle
|
|
Catastrophic Degradation of InGaN/GaN Blue Laser DiodesWen, Pengyan ; Zhang, Shuming ; Liu, Jianping ; Li, Deyao ; Zhang, Liqun ; Zhou, Kun ; Su, Xujun ; Tian, Aiqin ; Zhang, Feng ; Yang, HuiIEEE transactions on device and materials reliability, 2016-12, Vol.16 (4), p.638-641 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 10 |
Material Type: magazinearticle
|
|
An interview with David Foord, Director of Materials Science at Thermo Fisher ScientificMcGuire, Callum ; Foord, DavidReinforced plastics (London), 2019-11, Vol.63 (6), p.291-292 [Periódico revisado por pares]London: Elsevier LtdTexto completo disponível |
Resultados de 1 a 10 de 396 para Busca Geral
Ordenado por:
Ordenado por:
RelevânciaOr hit Enter to replace sort method
- Relevância
- Data mais recente
- Data mais antiga
- Mais acessados
- Autor
- Título
Personalize Seus Resultados
Refine Search Results
Expandir Meus Resultados
Refinar Meus Resultados
Assunto
- Science & Technology (259)
- Technology (213)
- Physical Sciences (211)
- Engineering (187)
- Physics (176)
- Engineering, Electrical & Electronic (172)
- Physics, Applied (172)
- Scanning Electron Microscopy (102)
- Electron Traps (63)
- Stress (58)
- Devices (56)
- Degradation (54)
- Logic Gates (53)
- Reliability (50)
- Semiconductor Devices (43)
- Safety, Risk, Reliability And Quality (42)
- Electronic, Optical And Magnetic Materials (42)
- Electrical And Electronic Engineering (42)
- Electrons (41)
- Geology (39)
-
Mais opções
Data de Publicação
- Antes de1996 (11)
- 1996Até2003 (21)
- 2004Até2010 (118)
- 2011Até2018 (120)
- Após 2018 (127)
-
Mais opções
Base de Dados/Biblioteca
- IEEE Electronic Library (IEL) Journals (253)
- Science Citation Index Expanded (Web of Science) (242)
- ANTE: Abstracts in New Technology & Engineering (127)
- DOAJ Directory of Open Access Journals (113)
- Electronic Journals Library - Freely accessible e-journals (96)
- Materials Research Database (85)
- IngentaConnect Journals (46)
- SciELO (46)
- ROAD: Directory of Open Access Scholarly Resources (46)
- EBSCO_Academic Search Premier (46)
- Engineered Materials Abstracts (45)
- BACON - Mir@bel - GLOBAL_LIBRESACCES (45)
- GeoScienceWorld (GSW) (43)
- Art Full Text & Art Index Retrospective (39)
- Aluminium Industry Abstracts (19)
- Business Source Complete - EBSCO (18)
- Wiley-Blackwell Full Collection 2013 (15)
- Wiley Online Library (15)
- Wiley-Blackwell Full Collection 2009 (15)
- AUC Wiley Frozen Package in 2012 (15)
-
Mais opções
Nome da Publicação
- Ieee Transactions On Device And Materials Reliability (223)
- Geosphere (43)
- Cerâmica (42)
- Shípĭn Kēxué (20)
- Ieee Computer Graphics And Applications (16)
- Journal Of Food Process Engineering (15)
- 食品科学 (15)
- Chemical Engineering Progress (8)
- Ieee Transactions On Mobile Computing (5)
- Ieee Control Systems (5)
-
Mais opções
Página Inicial
RSS
Feed
Políticas
Fale Conosco-
Realização:
Logos de Redes Sociais: 