Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: magazinearticle
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NEW PRODUCTSChemical engineering progress, 2022-12, Vol.118 (12), p.15-18 [Periódico revisado por pares]New York: American Institute of Chemical EngineersTexto completo disponível |
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2 |
Material Type: magazinearticle
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Performance, degradation monitors, and reliability of the CHISEL injection regimeDriussi, F. ; Esseni, D. ; Selmi, L.IEEE transactions on device and materials reliability, 2004-09, Vol.4 (3), p.327-334 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: magazinearticle
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Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility TransistorsFaqir, M. ; Verzellesi, G. ; Chini, A. ; Fantini, F. ; Danesin, F. ; Meneghesso, G. ; Zanoni, E. ; Dua, C.IEEE transactions on device and materials reliability, 2008-06, Vol.8 (2), p.240-247 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: magazinearticle
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Testing the Temperature Limits of GaN-Based HEMT DevicesMaier, David ; Alomari, Mohammed ; Grandjean, Nicolas ; Carlin, Jean-Francois ; Diforte-Poisson, Marie-Antoinette ; Dua, Christian ; Chuvilin, Andrey ; Troadec, David ; Gaquière, Christophe ; Kaiser, Ute ; Delage, Sylvain L ; Kohn, ErhardIEEE transactions on device and materials reliability, 2010-12, Vol.10 (4), p.427-436 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: magazinearticle
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Using soft secondary electron programming to reduce drain disturb in floating-gate NOR flash EEPROMsKumar, P.B. ; Nair, D.R. ; Mahapatra, S.IEEE transactions on device and materials reliability, 2006-03, Vol.6 (1), p.81-86 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: magazinearticle
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The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETsGuerin, C. ; Huard, V. ; Bravaix, A.IEEE transactions on device and materials reliability, 2007-06, Vol.7 (2), p.225-235 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: magazinearticle
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Transmission EELS attachment for SEMTao Luo ; Khursheed, A.IEEE transactions on device and materials reliability, 2006-06, Vol.6 (2), p.182-185 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: magazinearticle
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NEW PRODUCTSChemical engineering progress, 2023-03, Vol.119 (3), p.16-19 [Periódico revisado por pares]New York: American Institute of Chemical EngineersTexto completo disponível |
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9 |
Material Type: magazinearticle
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Microstructure Effect on EM-Induced Degradations in Dual Inlaid Copper InterconnectsSukharev, V. ; Kteyan, A. ; Zschech, E. ; Nix, W.D.IEEE transactions on device and materials reliability, 2009-03, Vol.9 (1), p.87-97 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: magazinearticle
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Adaptive Sampling of RF Fingerprints for Fine-Grained Indoor LocalizationLiu, Xiao-Yang ; Aeron, Shuchin ; Aggarwal, Vaneet ; Wang, Xiaodong ; Wu, Min-YouIEEE transactions on mobile computing, 2016-10, Vol.15 (10), p.2411-2423 [Periódico revisado por pares]Los Alamitos: IEEETexto completo disponível |