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1
Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient
Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient
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Identifying the Traps in the Channel Region in GaN-Based HEMTs Using a Nonmonotone Drain Current Transient

Zheng, Xiang ; Feng, Shiwei ; Zhang, Yamin ; Li, Xuan ; Bai, Kun

IEEE transactions on device and materials reliability, 2019-09, Vol.19 (3), p.509-513 [Periódico revisado por pares]

New York: IEEE

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2
Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al2O3/Si3N4 Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTs
Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al2O3/Si3N4 Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTs
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Analysis of the Extraction Method and Mechanism of Hot Carrier Degradation in Al2O3/Si3N4 Bilayer Gate Dielectric AlGaN/GaN MIS-HEMTs

Huang, Jen-Wei ; Chen, Po-Hsun ; Yeh, Tsung-Han ; Tsai, Xin-Ying ; Wu, Pei-Yu

IEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.510-515 [Periódico revisado por pares]

New York: IEEE

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3
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate
Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate
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Access Region Stack Engineering for Mitigation of Degradation in AlGaN/GaN HEMTs With Field Plate

Bordoloi, Sushanta ; Ray, Ashok ; Trivedi, Gaurav

IEEE transactions on device and materials reliability, 2022-03, Vol.22 (1), p.73-84 [Periódico revisado por pares]

New York: IEEE

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4
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
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Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs

Stockman, Arno ; Canato, Eleonora ; Meneghini, Matteo ; Meneghesso, Gaudenzio ; Moens, Peter ; Bakeroot, Benoit

IEEE transactions on device and materials reliability, 2021-06, Vol.21 (2), p.169-175 [Periódico revisado por pares]

New York: IEEE

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5
Catastrophic Degradation of InGaN/GaN Blue Laser Diodes
Catastrophic Degradation of InGaN/GaN Blue Laser Diodes
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Catastrophic Degradation of InGaN/GaN Blue Laser Diodes

Wen, Pengyan ; Zhang, Shuming ; Liu, Jianping ; Li, Deyao ; Zhang, Liqun ; Zhou, Kun ; Su, Xujun ; Tian, Aiqin ; Zhang, Feng ; Yang, Hui

IEEE transactions on device and materials reliability, 2016-12, Vol.16 (4), p.638-641 [Periódico revisado por pares]

New York: IEEE

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6
Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions
Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions
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Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions

Prasannanjaneyulu, Bhavana ; Mishra, Sukalpa ; Karmalkar, Shreepad

IEEE transactions on device and materials reliability, 2019-12, Vol.19 (4), p.766-773 [Periódico revisado por pares]

New York: IEEE

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7
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors
Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors
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Effects of Temperature and Bias Voltage on Electron Transport Properties in GaN High-Electron-Mobility Transistors

Pan, Shijie ; Feng, Shiwei ; Zheng, Xiang ; He, Xin ; Li, Xuan ; Bai, Kun

IEEE transactions on device and materials reliability, 2021-12, Vol.21 (4), p.494-499 [Periódico revisado por pares]

New York: IEEE

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8
Method of precise positioning for defect failure analysis based on nano-probing and EBAC
Method of precise positioning for defect failure analysis based on nano-probing and EBAC
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Method of precise positioning for defect failure analysis based on nano-probing and EBAC

Lan, Kuibo ; Tian, Li ; Wei, Yinlong ; Huang, Xiaodi ; Qin, Guoxuan

IEEE transactions on device and materials reliability, 2020-09, Vol.20 (3), p.1-1 [Periódico revisado por pares]

New York: IEEE

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9
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests
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Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests

Chen, Jie ; Zhou, Shuang ; Yang, Zhen-Guo

IEEE transactions on device and materials reliability, 2024-06, Vol.24 (2), p.260-267 [Periódico revisado por pares]

New York: IEEE

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10
Non-Destructive Imaging of Organosilicate Glass (OSG) Thin Films at Low Voltage With the EsB Detector
Non-Destructive Imaging of Organosilicate Glass (OSG) Thin Films at Low Voltage With the EsB Detector
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Non-Destructive Imaging of Organosilicate Glass (OSG) Thin Films at Low Voltage With the EsB Detector

Garitagoitia Cid, Aranzazu ; Moayedi, Elham ; Rosenkranz, Rudiger ; Clausner, Andre ; Pakbaz, Khashayar ; Zschech, Ehrenfried

IEEE transactions on device and materials reliability, 2016-12, Vol.16 (4), p.461-464 [Periódico revisado por pares]

New York: IEEE

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