Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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A Comparative Study of Different Physics-Based NBTI ModelsMahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A. E. ; Alam, M. A.IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility TransistorsJungwoo Joh ; del Alamo, J AIEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Electroluminescence from a Mixed Red−Green−Blue Colloidal Quantum Dot MonolayerAnikeeva, Polina O ; Halpert, Jonathan E ; Bawendi, Moungi G ; Bulović, VladimirNano letters, 2007-08, Vol.7 (8), p.2196-2200 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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4 |
Material Type: Artigo
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Quantum Dot Light-Emitting Devices with Electroluminescence Tunable over the Entire Visible SpectrumAnikeeva, Polina O ; Halpert, Jonathan E ; Bawendi, Moungi G ; Bulović, VladimirNano letters, 2009-07, Vol.9 (7), p.2532-2536 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Optimization of photomixers and antennas for continuous-wave terahertz emissionGregory, I.S. ; Baker, C. ; Tribe, W.R. ; Bradley, I.V. ; Evans, M.J. ; Linfield, E.H. ; Davies, A.G. ; Missous, M.IEEE journal of quantum electronics, 2005-05, Vol.41 (5), p.717-728 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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‘Giant’ CdSe/CdS Core/Shell Nanocrystal Quantum Dots As Efficient Electroluminescent Materials: Strong Influence of Shell Thickness on Light-Emitting Diode PerformancePal, Bhola N ; Ghosh, Yagnaseni ; Brovelli, Sergio ; Laocharoensuk, Rawiwan ; Klimov, Victor I ; Hollingsworth, Jennifer A ; Htoon, HanNano letters, 2012-01, Vol.12 (1), p.331-336 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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7 |
Material Type: Artigo
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Measurement of Channel Temperature in GaN High-Electron Mobility TransistorsJungwoo Joh ; del Alamo, J.A. ; Chowdhury, U. ; Tso-Min Chou ; Hua-Quen Tserng ; Jimenez, J.L.IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical MethodMeneghini, M. ; Ronchi, N. ; Stocco, A. ; Meneghesso, G. ; Mishra, U. K. ; Yi Pei ; Zanoni, E.IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.2996-3003 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Hybrid Silicon Nanocrystal−Organic Light-Emitting Devices for Infrared ElectroluminescenceCheng, Kai-Yuan ; Anthony, Rebecca ; Kortshagen, Uwe R ; Holmes, Russell JNano letters, 2010-04, Vol.10 (4), p.1154-1157 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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10 |
Material Type: Artigo
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Operation of a Continuously Frequency-Tunable Second-Harmonic CW 330-GHz Gyrotron for Dynamic Nuclear PolarizationTorrezan, A. C. ; Shapiro, M. A. ; Sirigiri, J. R. ; Temkin, R. J. ; Griffin, R. G.IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2777-2783 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |