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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Livro
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High-Resolution Spin-Resolved Photoemission Spectrometer and the Rashba Effect in Bismuth Thin FilmsTakayama, AkariTokyo: Springer Japan 2015Texto completo disponível |
| 2 |
Material Type: Artigo
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Point defects in two-dimensional hexagonal boron nitride: A perspectiveZhang, Jijun ; Sun, Rong ; Ruan, Dongliang ; Zhang, Min ; Li, Yanxi ; Zhang, Kai ; Cheng, Faliang ; Wang, Zhongchang ; Wang, Zhi-MingJournal of applied physics, 2020-09, Vol.128 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
| 3 |
Material Type: Artigo
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Wearable Organic Optoelectronic Sensors for MedicineBansal, Ashu K. ; Hou, Shuoben ; Kulyk, Olena ; Bowman, Eric M. ; Samuel, Ifor D. W.Advanced materials (Weinheim), 2015-12, Vol.27 (46), p.7638-7644 [Periódico revisado por pares]Germany: Blackwell Publishing LtdTexto completo disponível |
| 4 |
Material Type: Artigo
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Compact high-quality CdSe-CdS core-shell nanocrystals with narrow emission linewidths and suppressed blinkingChen, Ou ; Zhao, Jing ; Chauhan, Vikash P ; Cui, Jian ; Wong, Cliff ; Harris, Daniel K ; Wei, He ; Han, Hee-Sun ; Fukumura, Dai ; Jain, Rakesh K ; Bawendi, Moungi GNature materials, 2013-05, Vol.12 (5), p.445-451 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
| 5 |
Material Type: Artigo
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Time stretch and its applicationsMahjoubfar, Ata ; Churkin, Dmitry V ; Barland, Stephane ; Broderick, Neil ; Turitsyn, Sergei K ; Jalali, BahramNature photonics, 2017-06, Vol.11 (6), p.341-351 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
| 6 |
Material Type: Artigo
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A Comparative Study of Different Physics-Based NBTI ModelsMahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A. E. ; Alam, M. A.IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 7 |
Material Type: Artigo
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On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN DiodesGarcia-Sanchez, S. ; Daher, M. Abou ; Lesecq, M. ; Huo, L. ; Lingaparthi, R. ; Nethaji, D. ; Radhakrishnan, K. ; Iniguez-de-la-Torre, I. ; Vasallo, B. G. ; Perez, S. ; Gonzalez, T. ; Mateos, J.IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-0 [Periódico revisado por pares]IEEETexto completo disponível |
| 8 |
Material Type: Artigo
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Flexible Electrochemical Bioelectronics: The Rise of In Situ BioanalysisYu, You ; Nyein, Hnin Yin Yin ; Gao, Wei ; Javey, AliAdvanced materials (Weinheim), 2020-04, Vol.32 (15), p.e1902083-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
| 9 |
Material Type: Artigo
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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility TransistorsJungwoo Joh ; del Alamo, J AIEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 10 |
Material Type: Artigo
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Intrinsically Stretchable Polymer Light-Emitting Devices Using Carbon Nanotube-Polymer Composite ElectrodesYu, Zhibin ; Niu, Xiaofan ; Liu, Zhitian ; Pei, QibingAdvanced materials (Weinheim), 2011-09, Vol.23 (34), p.3989-3994 [Periódico revisado por pares]Weinheim: WILEY-VCH VerlagTexto completo disponível |
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