skip to main content
Idioma:
Resultados 1 2 3 next page
Refinado por: Nome da Publicação: Journal Of Applied Physics remover assunto: Physics remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications
Material Type:
Artigo 		Adicionar ao Meu Espaço

Deep-level transient spectroscopy of Al/a-Si:H/c-Si structures for heterojunction solar cell applications

Simoen, E. ; Ferro, V. ; O'Sullivan, B. J.

Journal of applied physics, 2014-12, Vol.116 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
2
Absorption and diffusion of beryllium in graphite, beryllium carbide formation investigated by density functional theory
Absorption and diffusion of beryllium in graphite, beryllium carbide formation investigated by density functional theory
Material Type:
Artigo 		Adicionar ao Meu Espaço

Absorption and diffusion of beryllium in graphite, beryllium carbide formation investigated by density functional theory

Ferro, Yves ; Allouche, Alain ; Linsmeier, Christian

Journal of applied physics, 2013-06, Vol.113 (21) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
3
The role of a-axis grains in the transition to the normal state of YBa2Cu3O7−δ films and of 2G-coated conductors when induced by high electrical current densities
The role of a-axis grains in the transition to the normal state of YBa2Cu3O7−δ films and of 2G-coated conductors when induced by high electrical current densities
Material Type:
Artigo 		Adicionar ao Meu Espaço

The role of a-axis grains in the transition to the normal state of YBa2Cu3O7−δ films and of 2G-coated conductors when induced by high electrical current densities

Bernstein, P. ; Ferro, G. ; Harnois, C. ; Mc Loughlin, C. ; Noudem, J. ; Osorio, M. R. ; Thimont, Y. ; Veira, J. A. ; Vidal, D. ; Vidal, F.

Journal of applied physics, 2014-02, Vol.115 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
4
Three-dimensional Poole-Frenkel analytical model for carrier transport in amorphous chalcogenides
Three-dimensional Poole-Frenkel analytical model for carrier transport in amorphous chalcogenides
Material Type:
Artigo 		Adicionar ao Meu Espaço

Three-dimensional Poole-Frenkel analytical model for carrier transport in amorphous chalcogenides

Betti Beneventi, Giovanni ; Guarino, Lucrezia ; Ferro, Massimo ; Fantini, Paolo

Journal of applied physics, 2013-01, Vol.113 (4) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
5
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Sledziewski, T. ; Vivona, M. ; Alassaad, K. ; Kwasnicki, P. ; Arvinte, R. ; Beljakowa, S. ; Weber, H. B. ; Giannazzo, F. ; Peyre, H. ; Souliere, V. ; Chassagne, T. ; Zielinski, M. ; Juillaguet, S. ; Ferro, G. ; Roccaforte, F. ; Krieger, M.

Journal of applied physics, 2016-11, Vol.120 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
6
Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces
Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces
Material Type:
Artigo 		Adicionar ao Meu Espaço

Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces

Eriksson, Jens ; Roccaforte, Fabrizio ; Fiorenza, Patrick ; Weng, Ming-Hung ; Giannazzo, Filippo ; Lorenzzi, Jean ; Jegenyes, Nikoletta ; Ferro, Gabriel ; Raineri, Vito

Journal of applied physics, 2011-01, Vol.109 (1) [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
7
Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC
Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC
Material Type:
Artigo 		Adicionar ao Meu Espaço

Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC

Sun, J W ; Zoulis, G ; Lorenzzi, J C ; Jegenyes, N ; Peyre, H ; Juillaguet, S ; Souliere, V ; Milesi, F ; Ferro, G ; Camassel, J

Journal of applied physics, 2010-07, Vol.108 (1), p.013503-013503-10 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
8
Process control and melt depth homogenization for SiC-on-Si structures during flash lamp annealing by carbon implantation
Process control and melt depth homogenization for SiC-on-Si structures during flash lamp annealing by carbon implantation
Material Type:
Artigo 		Adicionar ao Meu Espaço

Process control and melt depth homogenization for SiC-on-Si structures during flash lamp annealing by carbon implantation

Smith, M P ; McMahon, R A ; Voelskow, M ; Skorupa, W ; Stoemenos, J ; Ferro, G

Journal of applied physics, 2006-11, Vol.100 (9), p.094909-094909-8 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
9
Measurements of the surface critical current of YBa2Cu3O7−δ thin films: Probing the nonuniformity of their superconducting critical temperature along the c-axis
Measurements of the surface critical current of YBa2Cu3O7−δ thin films: Probing the nonuniformity of their superconducting critical temperature along the c-axis
Material Type:
Artigo 		Adicionar ao Meu Espaço

Measurements of the surface critical current of YBa2Cu3O7−δ thin films: Probing the nonuniformity of their superconducting critical temperature along the c-axis

Bernstein, P. ; Mosqueira, J. ; Siejka, J. ; Vidal, F. ; Thimont, Y. ; McLoughlin, C. ; Ferro, G.

Journal of applied physics, 2010-06, Vol.107 (12) [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
10
Structural properties of undoped and doped cubic GaN grown on SiC(001)
Structural properties of undoped and doped cubic GaN grown on SiC(001)
Material Type:
Artigo 		Adicionar ao Meu Espaço

Structural properties of undoped and doped cubic GaN grown on SiC(001)

Martinez-Guerrero, E. ; Bellet-Amalric, E. ; Martinet, L. ; Feuillet, G. ; Daudin, B. ; Mariette, H. ; Holliger, P. ; Dubois, C. ; Bru-Chevallier, C. ; Nze, P. Aboughe ; Chassagne, T. ; Ferro, G. ; Monteil, Y.

Journal of applied physics, 2002-04, Vol.91 (8), p.4983-4987 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Citações Citado por
Resultados 1 2 3 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Data de Publicação 

De até
Refinar
  1. Antes de1960  (3)
  2. 1960Até1970  (4)
  3. 1971Até1990  (3)
  4. 1991Até2003  (4)
  5. Após 2003  (9)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.