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Refinado por: Nome da Publicação: Journal Of Applied Physics remover assunto: Science & Technology remover
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1
Structural study of self-assembled Co nanoparticles
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Structural study of self-assembled Co nanoparticles

Chushkin, Y. ; Ulmeanu, M. ; Luby, S. ; Majkova, E. ; Kostic, I. ; Klang, P. ; Holý, V. ; Bochnı́ček, Z. ; Giersig, M. ; Hilgendorff, M. ; Metzger, T. H.

Journal of applied physics, 2003-12, Vol.94 (12), p.7743-7748 [Periódico revisado por pares]

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Structural relation between Si and SiC formed by carbon ion implantation
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Structural relation between Si and SiC formed by carbon ion implantation

Eichhorn, F. ; Schell, N. ; Mücklich, A. ; Metzger, H. ; Matz, W. ; Kögler, R.

Journal of applied physics, 2002-02, Vol.91 (3), p.1287-1292 [Periódico revisado por pares]

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3
Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon
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Influence of preamorphization on the structural properties of ultrashallow arsenic implants in silicon

Capello, L. ; Metzger, T. H. ; Werner, M. ; van den Berg, J. A. ; Servidori, M. ; Ottaviano, L. ; Bongiorno, C. ; Mannino, G. ; Feudel, T. ; Herden, M. ; Holý, V.

Journal of applied physics, 2006-11, Vol.100 (10), p.103533-103533-10 [Periódico revisado por pares]

American Institute of Physics

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4
Grazing incidence small angle x-ray scattering from free-standing nanostructures
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Grazing incidence small angle x-ray scattering from free-standing nanostructures

Rauscher, Markus ; Paniago, Rogerio ; Metzger, Hartmut ; Kovats, Zoltan ; Domke, Jan ; Peisl, Johann ; Pfannes, Hans-Dieter ; Schulze, Jörg ; Eisele, Ignaz

Journal of applied physics, 1999-12, Vol.86 (12), p.6763-6769 [Periódico revisado por pares]

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5
Depth-resolved measurement of lattice relaxation in Ga1-xInxAs/GaAs strained layer superlattices by means of grazing-incidence x-ray diffraction
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Depth-resolved measurement of lattice relaxation in Ga1-xInxAs/GaAs strained layer superlattices by means of grazing-incidence x-ray diffraction

PIETSCH, U ; METZGER, H ; RUGEL, S ; JENICHEN, B ; ROBINSON, I. K

Journal of applied physics, 1993-08, Vol.74 (4), p.2381-2387 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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6
Investigations of semiconductor superlattices by depth-sensitive x-ray methods
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Investigations of semiconductor superlattices by depth-sensitive x-ray methods

RHAN, H ; PIETSCH, U ; RUGEL, S ; METZGER, H ; PEISL, J

Journal of applied physics, 1993-07, Vol.74 (1), p.146-152 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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7
Measurement of Si 311 defect properties using x-ray scattering
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Measurement of Si 311 defect properties using x-ray scattering

Nordlund, K. ; Metzger, T. H. ; Malachias, A. ; Capello, L. ; Calvo, P. ; Claverie, A. ; Cristiano, F.

Journal of applied physics, 2005-10, Vol.98 (7), p.073529-073529-5 [Periódico revisado por pares]

American Institute of Physics

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8
X-ray analysis of temperature induced defect structures in boron implanted silicon
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X-ray analysis of temperature induced defect structures in boron implanted silicon

Sztucki, M. ; Metzger, T. H. ; Kegel, I. ; Tilke, A. ; Rouvière, J. L. ; Lübbert, D. ; Arthur, J. ; Patel, J. R.

Journal of applied physics, 2002-10, Vol.92 (7), p.3694-3703 [Periódico revisado por pares]

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9
Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low- k interconnects
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Synchrotron measurement of the effect of linewidth scaling on stress in advanced Cu/Low- k interconnects

Wilson, Christopher J. ; Croes, Kristof ; Zhao, Chao ; Metzger, Till H. ; Zhao, Larry ; Beyer, Gerald P. ; Horsfall, Alton B. ; O'Neill, Anthony G. ; Tőkei, Zsolt

Journal of applied physics, 2009-09, Vol.106 (5), p.053524-053524-7 [Periódico revisado por pares]

American Institute of Physics

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10
In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction
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In situ observation of the elastic deformation of a single epitaxial SiGe crystal by combining atomic force microscopy and micro x-ray diffraction

Rodrigues, M. S. ; Cornelius, T. W. ; Scheler, T. ; Mocuta, C. ; Malachias, A. ; Magalhães-Paniago, R. ; Dhez, O. ; Comin, F. ; Metzger, T. H. ; Chevrier, J.

Journal of applied physics, 2009-11, Vol.106 (10), p.103525-103525-6 [Periódico revisado por pares]

American Institute of Physics

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