Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
The NA49 data acquisition systemRAUCH, WIEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-02, Vol.41 (1), p.30-36 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
|
2 |
Material Type: Artigo
|
Integrating Visual and Network Data with Deep Learning for Streaming Video Quality AssessmentMargetis, George ; Tsagkatakis, Grigorios ; Stamou, Stefania ; Stephanidis, ConstantineSensors (Basel, Switzerland), 2023-04, Vol.23 (8), p.3998 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
|
3 |
Material Type: Artigo
|
Real-Time Stress Level Feedback from Raw Ecg Signals for Personalised, Context-Aware Applications Using Lightweight Convolutional Neural Network ArchitecturesTzevelekakis, Konstantinos ; Stefanidi, Zinovia ; Margetis, GeorgeSensors (Basel, Switzerland), 2021-11, Vol.21 (23), p.7802 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
|
4 |
Material Type: Artigo
|
Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layersMargetis, Joe ; Yu, Shui-Qing ; Bhargava, Nupur ; Li, Baohua ; Du, Wei ; Tolle, JohnSemiconductor science and technology, , Vol.32 (12) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
|
5 |
Material Type: Artigo
|
Real-Time Adaptation of Context-Aware Intelligent User Interfaces, for Enhanced Situational AwarenessStefanidi, Zinovia ; Margetis, George ; Ntoa, Stavroula ; Papagiannakis, GeorgeIEEE access, 2022, Vol.10, p.23367-23393 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
|
6 |
Material Type: Artigo
|
Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μmPham, T.N ; Du, W ; Conley, B.R ; Margetis, J ; Sun, G ; Soref, R.A ; Tolle, J ; Li, B ; Yu, S.-QElectronics letters, 2015-05, Vol.51 (11), p.854-856 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
|
7 |
Material Type: Artigo
|
Epitaxial GeSn: impact of process conditions on material qualityLoo, Roger ; Shimura, Yosuke ; Ike, Shinichi ; Vohra, Anurag ; Stoica, Toma ; Stange, Daniela ; Buca, Dan ; Kohen, David ; Margetis, Joe ; Tolle, JohnSemiconductor science and technology, 2018-10, Vol.33 (11), p.114010 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
|
8 |
Material Type: Artigo
|
As doping of Si-Ge-Sn epitaxial semiconductor materials on a commercial CVD reactorBhargava, Nupur ; Margetis, Joe ; Tolle, JohnSemiconductor science and technology, 2017-09, Vol.32 (9), p.94003 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
|
9 |
Material Type: Artigo
|
Augmenting natural interaction with physical paper in ambient intelligence environmentsMargetis, George ; Ntoa, Stavroula ; Antona, Margherita ; Stephanidis, ConstantineMultimedia tools and applications, 2019-05, Vol.78 (10), p.13387-13433 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
|
10 |
Material Type: Artigo
|
(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D IntegrationPorret, Clement ; Hikavyy, Andriy Yakovitch ; Gomez Granados, Juan Fernando ; Baudot, Sylvain ; Vohra, Anurag ; Kunert, Bernardette ; Douhard, Bastien ; Bogdanowicz, Janusz ; Schaekers, Marc ; Kohen, David ; Margetis, Joe ; Tolle, John ; Lima, Lucas ; Sammak, Amir ; Scappucci, Giordano ; Rosseel, Erik ; Langer, Robert ; Loo, RogerECS transactions, , Vol.86 (7), p.163-175The Electrochemical Society, IncTexto completo disponível |