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Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process
Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process
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Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process

Weiser, Philip M. ; Monakhov, Eduard ; Haug, Halvard ; Wiig, Marie Syre ; Søndenå, Rune

Journal of applied physics, 2020-02, Vol.127 (6) [Periódico revisado por pares]

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2
Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution
Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution
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Defect annealing kinetics in ZnO implanted with Zn substituting elements: Zn interstitials and Li redistribution

Azarov, Alexander ; Aarseth, Bjørn L. ; Vines, Lasse ; Hallén, Anders ; Monakhov, Edouard ; Kuznetsov, Andrej

Journal of applied physics, 2019-02, Vol.125 (7) [Periódico revisado por pares]

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3
Self-trapped hole and impurity-related broad luminescence in β-Ga2O3
Self-trapped hole and impurity-related broad luminescence in β-Ga2O3
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Self-trapped hole and impurity-related broad luminescence in β-Ga2O3

Frodason, Y. K. ; Johansen, K. M. ; Vines, L. ; Varley, J. B.

Journal of applied physics, 2020-02, Vol.127 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
The temperature-dependency of the optical band gap of ZnO measured by electron energy-loss spectroscopy in a scanning transmission electron microscope
The temperature-dependency of the optical band gap of ZnO measured by electron energy-loss spectroscopy in a scanning transmission electron microscope
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The temperature-dependency of the optical band gap of ZnO measured by electron energy-loss spectroscopy in a scanning transmission electron microscope

Granerød, Cecilie S. ; Galeckas, Augustinas ; Johansen, Klaus Magnus ; Vines, Lasse ; Prytz, Øystein

Journal of applied physics, 2018-04, Vol.123 (14) [Periódico revisado por pares]

American Institute of Physics (AIP)

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5
The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure
The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure
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The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure

Schifano, R. ; Wierzbicka, A. ; Dluzewski, P. ; Domagala, J. Z. ; Wozniak, W. ; Kurowska, B. ; Bazioti, C. ; Guziewicz, E.

Journal of applied physics, 2022-08, Vol.132 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Bandgap and band edge positions in compositionally graded ZnCdO
Bandgap and band edge positions in compositionally graded ZnCdO
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Bandgap and band edge positions in compositionally graded ZnCdO

Jensen, I. J. T. ; Johansen, K. M. ; Zhan, W. ; Venkatachalapathy, V. ; Brillson, L. ; Kuznetsov, A. Yu ; Prytz, Ø.

Journal of applied physics, 2018-07, Vol.124 (1) [Periódico revisado por pares]

American Institute of Physics (AIP)

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7
A new approach to the inverse problem for current mapping in thin-film superconductors
A new approach to the inverse problem for current mapping in thin-film superconductors
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A new approach to the inverse problem for current mapping in thin-film superconductors

Zuber, J. W. ; Wells, F. S. ; Fedoseev, S. A. ; Johansen, T. H. ; Rosenfeld, A. B. ; Pan, A. V.

Journal of applied physics, 2018-03, Vol.123 (12) [Periódico revisado por pares]

American Institute of Physics (AIP)

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8
Defect stabilization and reverse annealing in ZnO implanted with nitrogen at room and cryogenic temperature
Defect stabilization and reverse annealing in ZnO implanted with nitrogen at room and cryogenic temperature
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Defect stabilization and reverse annealing in ZnO implanted with nitrogen at room and cryogenic temperature

Azarov, Alexander ; Wendler, Elke ; Monakhov, Edouard ; Svensson, Bengt G.

Journal of applied physics, 2018-03, Vol.123 (10) [Periódico revisado por pares]

American Institute of Physics (AIP)

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9
Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC
Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC
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Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC

Karsthof, Robert ; Etzelmüller Bathen, Marianne ; Kuznetsov, Andrej ; Vines, Lasse

Journal of applied physics, 2022-01, Vol.131 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3
Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3
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Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3

Karjalainen, A. ; Weiser, P. M. ; Makkonen, I. ; Reinertsen, V. M. ; Vines, L. ; Tuomisto, F.

Journal of applied physics, 2021-04, Vol.129 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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