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Refinado por: Base de dados/Biblioteca: AIP Journals (American Institute of Physics) remover idioma: Japonês remover
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1
Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN
Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN
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Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN

Sun, Minglei ; Chou, Jyh-Pin ; Ren, Qingqiang ; Zhao, Yiming ; Yu, Jin ; Tang, Wencheng

Applied physics letters, 2017-04, Vol.110 (17) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Band offsets and heterostructures of two-dimensional semiconductors
Band offsets and heterostructures of two-dimensional semiconductors
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Band offsets and heterostructures of two-dimensional semiconductors

Kang, Jun ; Tongay, Sefaattin ; Zhou, Jian ; Li, Jingbo ; Wu, Junqiao

Applied physics letters, 2013-01, Vol.102 (1) [Periódico revisado por pares]

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3
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures
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2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Roy, Tania ; Tosun, Mahmut ; Hettick, Mark ; Ahn, Geun Ho ; Hu, Chenming ; Javey, Ali

Applied physics letters, 2016-02, Vol.108 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Two-dimensional van der Waals electrical contact to monolayer MoSi2N4
Two-dimensional van der Waals electrical contact to monolayer MoSi2N4
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Two-dimensional van der Waals electrical contact to monolayer MoSi2N4

Cao, Liemao ; Zhou, Guanghui ; Wang, Qianqian ; Ang, L. K. ; Ang, Yee Sin

Applied physics letters, 2021-01, Vol.118 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
GaN-based power devices: Physics, reliability, and perspectives
GaN-based power devices: Physics, reliability, and perspectives
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GaN-based power devices: Physics, reliability, and perspectives

Meneghini, Matteo ; De Santi, Carlo ; Abid, Idriss ; Buffolo, Matteo ; Cioni, Marcello ; Khadar, Riyaz Abdul ; Nela, Luca ; Zagni, Nicolò ; Chini, Alessandro ; Medjdoub, Farid ; Meneghesso, Gaudenzio ; Verzellesi, Giovanni ; Zanoni, Enrico ; Matioli, Elison

Journal of applied physics, 2021-11, Vol.130 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
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Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

Zomer, P. J. ; Guimarães, M. H. D. ; Brant, J. C. ; Tombros, N. ; van Wees, B. J.

Applied physics letters, 2014-07, Vol.105 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
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MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures

Islam, S. M. ; Lee, Kevin ; Verma, Jai ; Protasenko, Vladimir ; Rouvimov, Sergei ; Bharadwaj, Shyam ; (Grace) Xing, Huili ; Jena, Debdeep

Applied physics letters, 2017-01, Vol.110 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Interfacial charge transfer exciton enhanced by plasmon in 2D in-plane lateral and van der Waals heterostructures
Interfacial charge transfer exciton enhanced by plasmon in 2D in-plane lateral and van der Waals heterostructures
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Interfacial charge transfer exciton enhanced by plasmon in 2D in-plane lateral and van der Waals heterostructures

Mu, Xijiao ; Sun, Mengtao

Applied physics letters, 2020-08, Vol.117 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
A WSe2/MoSe2 heterostructure photovoltaic device
A WSe2/MoSe2 heterostructure photovoltaic device
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A WSe2/MoSe2 heterostructure photovoltaic device

Flöry, Nikolaus ; Jain, Achint ; Bharadwaj, Palash ; Parzefall, Markus ; Taniguchi, Takashi ; Watanabe, Kenji ; Novotny, Lukas

Applied physics letters, 2015-09, Vol.107 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Exchange bias and spin–orbit torque in the Fe3GeTe2-based heterostructures prepared by vacuum exfoliation approach
Exchange bias and spin–orbit torque in the Fe3GeTe2-based heterostructures prepared by vacuum exfoliation approach
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Exchange bias and spin–orbit torque in the Fe3GeTe2-based heterostructures prepared by vacuum exfoliation approach

Zhang, Yu ; Xu, Hongjun ; Yi, Changjiang ; Wang, Xiao ; Huang, Yuan ; Tang, Jian ; Jiang, Jialiang ; He, Congli ; Zhao, Mingkun ; Ma, Tianyi ; Dong, Jing ; Guo, Chenyang ; Feng, Jiafeng ; Wan, Caihua ; Wei, Hongxiang ; Du, Haifeng ; Shi, Youguo ; Yu, Guoqiang ; Zhang, Guangyu ; Han, Xiufeng

Applied physics letters, 2021-06, Vol.118 (26) [Periódico revisado por pares]

Melville: American Institute of Physics

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