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Impact of self-heating effect on long-term reliability and performance degradation in CMOS circuits
Impact of self-heating effect on long-term reliability and performance degradation in CMOS circuits
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Impact of self-heating effect on long-term reliability and performance degradation in CMOS circuits

Semenov, O. ; Vassighi, A. ; Sachdev, M.

IEEE transactions on device and materials reliability, 2006-03, Vol.6 (1), p.17-27 [Periódico revisado por pares]

New York: IEEE

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2
Reliability properties of low-voltage ferroelectric capacitors and memory arrays
Reliability properties of low-voltage ferroelectric capacitors and memory arrays
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Reliability properties of low-voltage ferroelectric capacitors and memory arrays

Rodriguez, J.A. ; Remack, K. ; Boku, K. ; Udayakumar, K.R. ; Aggarwal, S. ; Summerfelt, S.R. ; Celii, F.G. ; Martin, S. ; Hall, L. ; Taylor, K. ; Moise, T. ; McAdams, H. ; McPherson, J. ; Bailey, R. ; Fox, G. ; Depner, M.

IEEE transactions on device and materials reliability, 2004-09, Vol.4 (3), p.436-449 [Periódico revisado por pares]

New York: IEEE

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3
Packaging effects on reliability of Cu/low-k interconnects
Packaging effects on reliability of Cu/low-k interconnects
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Packaging effects on reliability of Cu/low-k interconnects

Guotao Wang ; Merrill, C. ; Jie-Hua Zhao ; Groothuis, S.K. ; Ho, P.S.

IEEE transactions on device and materials reliability, 2003-12, Vol.3 (4), p.119-128 [Periódico revisado por pares]

New York: IEEE

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4
The Effects of Al Doping and Metallic-Cap Layers on Electromigration Transport Mechanisms in Copper Nanowires
The Effects of Al Doping and Metallic-Cap Layers on Electromigration Transport Mechanisms in Copper Nanowires
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The Effects of Al Doping and Metallic-Cap Layers on Electromigration Transport Mechanisms in Copper Nanowires

Ming-Hsien Lin ; Oates, A. S.

IEEE transactions on device and materials reliability, 2011-12, Vol.11 (4), p.540-547 [Periódico revisado por pares]

New York: IEEE

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5
Current crowding effect on copper dual damascene via bottom failure for ULSI applications
Current crowding effect on copper dual damascene via bottom failure for ULSI applications
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Current crowding effect on copper dual damascene via bottom failure for ULSI applications

Cher Ming Tan ; Roy, A. ; Vairagar, A.V. ; Krishnamoorthy, A. ; Mhaisalkar, S.G.

IEEE transactions on device and materials reliability, 2005-06, Vol.5 (2), p.198-205 [Periódico revisado por pares]

New York: IEEE

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6
Strained epilayers effectively reduce plasma-induced fluorine damage in P-HEMTs
Strained epilayers effectively reduce plasma-induced fluorine damage in P-HEMTs
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Strained epilayers effectively reduce plasma-induced fluorine damage in P-HEMTs

Uchiyama, H. ; Taniguchi, T. ; Kudo, M.

IEEE transactions on device and materials reliability, 2005-12, Vol.5 (4), p.706-712 [Periódico revisado por pares]

New York: IEEE

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7
Analysis of flip-chip packaging challenges on copper/low-k interconnects
Analysis of flip-chip packaging challenges on copper/low-k interconnects
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Analysis of flip-chip packaging challenges on copper/low-k interconnects

Mercado, L.L. ; Goldberg, C. ; Kuo, S.-M. ; Tien-Yu ; Tom Lee ; Pozder, S.K.

IEEE transactions on device and materials reliability, 2003-12, Vol.3 (4), p.111-118 [Periódico revisado por pares]

New York: IEEE

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8
Simulation and experiments of stress migration for Cu/low-k BEoL
Simulation and experiments of stress migration for Cu/low-k BEoL
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Simulation and experiments of stress migration for Cu/low-k BEoL

Zhai, C.J. ; Yao, H.W. ; Marathe, A.P. ; Besser, P.R. ; Blish, R.C.

IEEE transactions on device and materials reliability, 2004-09, Vol.4 (3), p.523-529 [Periódico revisado por pares]

New York: IEEE

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9
Statistical study for electromigration reliability in dual-damascene Cu interconnects
Statistical study for electromigration reliability in dual-damascene Cu interconnects
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Statistical study for electromigration reliability in dual-damascene Cu interconnects

Ki-Don Lee ; Ho, P.S.

IEEE transactions on device and materials reliability, 2004-06, Vol.4 (2), p.237-245 [Periódico revisado por pares]

New York: IEEE

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10
Dependence of process parameters on stress generation in aluminum thin films
Dependence of process parameters on stress generation in aluminum thin films
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Dependence of process parameters on stress generation in aluminum thin films

Horsfall, A.B. ; Kai Wang ; dos-Santos, J.M.M. ; Soare, S.M. ; Bull, S.J. ; Wright, N.G. ; O'Neill, A.G. ; Terry, J.G. ; Walton, A.J. ; Gundlach, A.M. ; Stevenson, J.T.M.

IEEE transactions on device and materials reliability, 2004-09, Vol.4 (3), p.482-487 [Periódico revisado por pares]

New York: IEEE

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