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Logic with memory: and gates made of organic and inorganic memristive devices
Logic with memory: and gates made of organic and inorganic memristive devices
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Logic with memory: and gates made of organic and inorganic memristive devices

Baldi, G ; Battistoni, S ; Attolini, G ; Bosi, M ; Collini, C ; Iannotta, S ; Lorenzelli, L ; Mosca, R ; Ponraj, J S ; Verucchi, R ; Erokhin, V

Semiconductor science and technology, 2014-10, Vol.29 (10), p.104009 [Periódico revisado por pares]

IOP Publishing

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2
Studies of nanoindentation and residual stress analysis of Ge GaAs epilayers
Studies of nanoindentation and residual stress analysis of Ge GaAs epilayers
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Studies of nanoindentation and residual stress analysis of Ge GaAs epilayers

Ponraj, Joice Sophia ; Buffagni, Elisa ; Deivasigamani, Geetha ; Dakshanamoorthy, Arivuoli ; Bosi, Matteo ; Ferrari, Claudio ; Attolini, Giovanni

Semiconductor science and technology, 2015-05, Vol.30 (5), p.55004 [Periódico revisado por pares]

IOP Publishing

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3
Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal–organic vapour phase epitaxy
Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal–organic vapour phase epitaxy
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Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal–organic vapour phase epitaxy

Bosi, M ; Fornari, R ; Scardova, S ; Avella, M ; Martínez, O ; Jimenez, J

Semiconductor science and technology, 2004-02, Vol.19 (2), p.147-151 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy
Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy
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Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy

Fornari, R ; Bosi, M ; Bersani, D ; Attolini, G ; Lottici, P P ; Pelosi, C

Semiconductor science and technology, 2001-09, Vol.16 (9), p.776-782 [Periódico revisado por pares]

Bristol: IOP Publishing

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5
The absence of energy transfer between F and M centres in alkali halides: the case of NaF
The absence of energy transfer between F and M centres in alkali halides: the case of NaF
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The absence of energy transfer between F and M centres in alkali halides: the case of NaF

Bosi, Leonardo ; Gallo, Daniela ; Zelada, Marco

Journal of physics. Condensed matter, 1996-04, Vol.8 (15), p.2695-2703 [Periódico revisado por pares]

Bristol: IOP Publishing

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6
Optical properties of Ag+ impurities in KMgF3 crystals
Optical properties of Ag+ impurities in KMgF3 crystals
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Optical properties of Ag+ impurities in KMgF3 crystals

SCACCO, A ; FINOCCHI, M ; MEINARDI, F ; MATTEI, C ; GRASSANO, U. M ; FRANCINI, R ; FARDELLI, A ; ZEMA, N ; BOSI, L ; GALLO, D ; MARTINI, M

Journal of physics. Condensed matter, 1997-06, Vol.9 (24), p.5265-5276 [Periódico revisado por pares]

Bristol: Institute of Physics

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7
Monte Carlo high-field transport in degenerate GaAs
Monte Carlo high-field transport in degenerate GaAs
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Monte Carlo high-field transport in degenerate GaAs

Bosi, S ; Jacoboni, C

Journal of physics. C, Solid state physics, 1976-01, Vol.9 (2), p.315-319

IOP Publishing

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8
Structure and collective excitations in amorphous selenium
Structure and collective excitations in amorphous selenium
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Structure and collective excitations in amorphous selenium

Sacchetti, F ; Bosi, P ; Menzinger, F

Journal of physics. C, Solid state physics, 1982-07, Vol.15 (21), p.4483-4491

IOP Publishing

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9
Some evidence for a structural transition in electrolyte solutions
Some evidence for a structural transition in electrolyte solutions
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Some evidence for a structural transition in electrolyte solutions

Cubiotti, G ; Bosi, P ; Menzinger, F ; Sacchetti, F

Journal of physics. C, Solid state physics, 1980-04, Vol.13 (10), p.1951-1954

IOP Publishing

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10
Observations of the dispersion relation of the O-D stretching modes in heavy ice Ih
Observations of the dispersion relation of the O-D stretching modes in heavy ice Ih
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Observations of the dispersion relation of the O-D stretching modes in heavy ice Ih

Andreani, C ; Bosi, P ; Mazzega, E ; Sacchetti, F ; Windsor, C G

Journal of physics. C, Solid state physics, 1983-06, Vol.16 (16), p.3055-3060

London: IOP Publishing

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