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1 |
Material Type: Ata de Congresso
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Special Issue on Real Time Networks and Systems: Proceedings of 24th International Conference on Real-Time Networks and Systems (RTNS 2016), held at Université de Bretagne Occidentale (November 2016, in Brest, France)Faucou, Sébastien ; Pinho, Luís MiguelReal-Time Systems, 2018, Vol.54 (4) [Periódico revisado por pares]Springer VerlagTexto completo disponível |
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2 |
Material Type: Ata de Congresso
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Spatial cognition of Samba and CharlestonLeman, Marc ; Naveda, Luiz AlbertoSPRINGER HEIDELBERG 2009Sem texto completo |
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3 |
Material Type: Ata de Congresso
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Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron DiffractionLi, Jinghong ; Domenicucci, Anthony ; Chidambarrao, Dureseti ; Greene, Brian ; Rovdedo, Nivo ; Holt, Judson ; Dunn, Drerren ; Ng, HungMRS proceedings, 2006, Vol.913, Article 0913-D05-03New York, USA: Cambridge University PressSem texto completo |
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4 |
Material Type: Ata de Congresso
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Diffraction from Periodic Arrays of Oxide-Filled Trenches in Silicon: Investigation of Local StrainsEberlein, Michel ; ESCOUBAS, Stephanie ; GAILHANOU, Marc ; THOMAS, Olivier ; ROHR, Pascal ; COPPARD, RomainMRS proceedings, 2006, Vol.913, Article 0913-D05-02New York, USA: Cambridge University PressSem texto completo |
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5 |
Material Type: Ata de Congresso
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Predictive Model for B Diffusion in Strained SiGe Based on Atomistic CalculationsAhn, Chihak ; Song, Jakyoung ; Dunham, Scott TMRS proceedings, 2006, Vol.913, Article 0913-D05-07New York, USA: Cambridge University PressSem texto completo |
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6 |
Material Type: Ata de Congresso
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Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET ScalingGuegan, Georges ; Gwoziecki, Romain ; Gonnard, Olivier ; Gouget, Gilles ; Raynaud, Christine ; Casse, Mikael ; Deleonibus, SimonMRS proceedings, 2006, Vol.913, Article 0913-D03-02New York, USA: Cambridge University PressSem texto completo |
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7 |
Material Type: Ata de Congresso
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Effect of Spacer Scaling on PMOS TransistorsLau, Wai Shing ; Eng, Chee Wee ; Vigar, David ; Chan, Lap ; Siah, Soh YunMRS proceedings, 2006, Vol.913, Article 0913-D03-04New York, USA: Cambridge University PressSem texto completo |
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8 |
Material Type: Ata de Congresso
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TCAD Modeling of Strain-Engineered MOSFETsSmith, LeeMRS proceedings, 2006, Vol.913, Article 0913-D05-05New York, USA: Cambridge University PressSem texto completo |
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9 |
Material Type: Ata de Congresso
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Mobility Enhancement by Strained Nitride Liners for 65nm CMOS Logic Design FeaturesOrtolland, Claude ; Morin, Pierre ; Arnaud, Franck ; Orain, Stephane ; Reddy, Chandra ; Chaton, Catherine ; Stolk, PeterMRS proceedings, 2006, Vol.913, Article 0913-D02-02New York, USA: Cambridge University PressSem texto completo |
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10 |
Material Type: Ata de Congresso
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Process-Induced Strained P-MOSFET Featuring Nickel-Platinum Silicided Source/DrainLee, Rinus Tek Po ; Liow, Tsung-Yang ; Tan, Kian-Ming ; Ang, Kah-Wee ; Chui, King-Jien ; Guo, Qiang-Lo ; Samudra, Ganesh ; Chi, Dong-Zhi ; Yeo, Yee-ChiaMRS proceedings, 2006, Vol.913, Article 0913-D02-04New York, USA: Cambridge University PressSem texto completo |