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GaN high electron mobility transistors for sub-millimeter wave applications
GaN high electron mobility transistors for sub-millimeter wave applications
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GaN high electron mobility transistors for sub-millimeter wave applications

Lee, Dong Seup ; Liu, Zhihong ; Palacios, Tomás

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100212-1-100212-10 [Periódico revisado por pares]

The Japan Society of Applied Physics

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2
Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates
Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates
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Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates

Tanaka, Takeshi ; Kaneda, Naoki ; Mishima, Tomoyoshi ; Kihara, Yuhei ; Aoki, Toshichika ; Shiojima, Kenji

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.41002-1-041002-7 [Periódico revisado por pares]

The Japan Society of Applied Physics

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3
GaN transistors on Si for switching and high-frequency applications
GaN transistors on Si for switching and high-frequency applications
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GaN transistors on Si for switching and high-frequency applications

Ueda, Tetsuzo ; Ishida, Masahiro ; Tanaka, Tsuyoshi ; Ueda, Daisuke

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100214-1-100214-8 [Periódico revisado por pares]

The Japan Society of Applied Physics

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4
Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping
Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping
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Enhanced thermal stability of alpha gallium oxide films supported by aluminum doping

Lee, Sam-Dong ; Ito, Yoshito ; Kaneko, Kentaro ; Fujita, Shizuo

Japanese Journal of Applied Physics, 2015-03, Vol.54 (3), p.30301-1-030301-4 [Periódico revisado por pares]

The Japan Society of Applied Physics

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5
Conduction of spin currents through insulating antiferromagnetic oxides
Conduction of spin currents through insulating antiferromagnetic oxides
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Conduction of spin currents through insulating antiferromagnetic oxides

Hahn, Christian ; de Loubens, Grégoire ; Naletov, Vladimir V. ; Ben Youssef, Jamal ; Klein, Olivier ; Viret, Michel

Europhysics letters, 2014-12, Vol.108 (5), p.57005-p1-57005-p5 [Periódico revisado por pares]

EDP Sciences, IOP Publishing and Società Italiana di Fisica

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6
Temperature Dependence of Scintillation Properties of Bright Oxide Scintillators for Well-Logging
Temperature Dependence of Scintillation Properties of Bright Oxide Scintillators for Well-Logging
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Temperature Dependence of Scintillation Properties of Bright Oxide Scintillators for Well-Logging

Yanagida, Takayuki ; Fujimoto, Yutaka ; Kurosawa, Shunsuke ; Kamada, Kei ; Takahashi, Hiromitsu ; Fukazawa, Yasushi ; Nikl, Martin ; Chani, Valery

Japanese Journal of Applied Physics, 2013-07, Vol.52 (7), p.076401-076401-6 [Periódico revisado por pares]

The Japan Society of Applied Physics

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7
Graphene oxide coating facilitates the bioactivity of scaffold material for tissue engineering
Graphene oxide coating facilitates the bioactivity of scaffold material for tissue engineering
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Graphene oxide coating facilitates the bioactivity of scaffold material for tissue engineering

Nishida, Erika ; Miyaji, Hirofumi ; Takita, Hiroko ; Kanayama, Izumi ; Tsuji, Maiko ; Akasaka, Tsukasa ; Sugaya, Tsutomu ; Sakagami, Ryuji ; Kawanami, Masamitsu

Japanese Journal of Applied Physics, 2014-06, Vol.53 (6S), p.6-1-06JD04-7 [Periódico revisado por pares]

The Japan Society of Applied Physics

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8
Silicon carbide wafer bonding by modified surface activated bonding method
Silicon carbide wafer bonding by modified surface activated bonding method
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Silicon carbide wafer bonding by modified surface activated bonding method

Suga, Tadatomo ; Mu, Fengwen ; Fujino, Masahisa ; Takahashi, Yoshikazu ; Nakazawa, Haruo ; Iguchi, Kenichi

Japanese Journal of Applied Physics, 2015-03, Vol.54 (3), p.30214-1-030214-5 [Periódico revisado por pares]

The Japan Society of Applied Physics

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9
Properties of crystalline In-Ga-Zn-oxide semiconductor and its transistor characteristics
Properties of crystalline In-Ga-Zn-oxide semiconductor and its transistor characteristics
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Properties of crystalline In-Ga-Zn-oxide semiconductor and its transistor characteristics

Yamazaki, Shunpei ; Suzawa, Hideomi ; Inoue, Koki ; Kato, Kiyoshi ; Hirohashi, Takuya ; Okazaki, Kenichi ; Kimizuka, Noboru

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04ED18-10 [Periódico revisado por pares]

The Japan Society of Applied Physics

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10
Exploring Electro-active Functionality of Transparent Oxide Materials
Exploring Electro-active Functionality of Transparent Oxide Materials
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Exploring Electro-active Functionality of Transparent Oxide Materials

Hosono, Hideo

Japanese Journal of Applied Physics, 2013-09, Vol.52 (9), p.090001-090001-13 [Periódico revisado por pares]

The Japan Society of Applied Physics

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