Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect TransistorsMemisevic, Elvedin ; Svensson, Johannes ; Lind, Erik ; Wernersson, Lars-ErikIEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4746-4751 [Periódico revisado por pares]IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETsGribisch, Philipp ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ; Lind, ErikIEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4101-4107 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC SubstratesGribisch, Philipp ; Carrascon, Rosalia Delgado ; Darakchieva, Vanya ; Lind, ErikIEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-7 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETsZota, Cezar B. ; Roll, Guntrade ; Wernersson, Lars-Erik ; Lind, ErikIEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4078-4083 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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GaN-on-Si Power Technology: Devices and ApplicationsChen, Kevin J. ; Haberlen, Oliver ; Lidow, Alex ; Chun Lin Tsai ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Yifeng WuIEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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The Past, the Present, and the Future of Ferroelectric MemoriesMikolajick, T. ; Schroeder, U. ; Slesazeck, S.IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-10 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight ElementBurr, Geoffrey W. ; Shelby, Robert M. ; Sidler, Severin ; di Nolfo, Carmelo ; Junwoo Jang ; Boybat, Irem ; Shenoy, Rohit S. ; Narayanan, Pritish ; Virwani, Kumar ; Giacometti, Emanuele U. ; Kurdi, Bulent N. ; Hyunsang HwangIEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3498-3507 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory PerformanceNi, Kai ; Sharma, Pankaj ; Zhang, Jianchi ; Jerry, Matthew ; Smith, Jeffery A. ; Tapily, Kandabara ; Clark, Robert ; Mahapatra, Souvik ; Datta, SumanIEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2461-2469 [Periódico revisado por pares]IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Phase-Change Memory-Towards a Storage-Class MemoryFong, Scott W. ; Neumann, Christopher M. ; Wong, H.-S PhilipIEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4374-4385 [Periódico revisado por pares]IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Vertical Power p-n Diodes Based on Bulk GaNKizilyalli, Isik C. ; Edwards, Andrew P. ; Aktas, Ozgur ; Prunty, Thomas ; Bour, DavidIEEE transactions on electron devices, 2015-02, Vol.62 (2), p.414-422 [Periódico revisado por pares]IEEETexto completo disponível |