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Refinado por: autor: Fazzio, A remover Nome da Publicação: Solid State Communications remover
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1
Impurity states in the narrow band-gap semiconductor n-type 'IN''SB'
Impurity states in the narrow band-gap semiconductor n-type 'IN''SB'
Material Type:
Artigo 		Adicionar ao Meu Espaço

Impurity states in the narrow band-gap semiconductor n-type 'IN''SB'

A. F. Silva N S Dantas; F B Mota; Sylvio Canuto; A Fazzio

New York v.99, n.4 , p.295-7, 1996 Solid State Communications

New York 1996

Item não circula. Consulte sua biblioteca.(Acessar)

2
Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'
Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'
Material Type:
Artigo 		Adicionar ao Meu Espaço

Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'

Cesar R S da Silva P Venezuela; Antonio Jose Roque da Silva; Adalberto Fazzio

Solid State Communications Oxford v. 120, n. 9-10, p. 369-373, 2001

Oxford 2001

Acesso online

3
Phenomenological band structure model of magnetic coupling in semiconductors
Phenomenological band structure model of magnetic coupling in semiconductors
Material Type:
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Phenomenological band structure model of magnetic coupling in semiconductors

Gustavo M Dalpian Su-Huai Wei; X Z Gong; Antonio Jose Roque da Silva; Adalberto Fazzio

Solid State Communications v. 138, n. 7, p. 353-358, 2006

Oxford 2006

Acesso online

4
Energetics and stability of vacancies in carbon nanotubes
Energetics and stability of vacancies in carbon nanotubes
Material Type:
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Energetics and stability of vacancies in carbon nanotubes

J E Padilha R G Amorim; A R Rocha; A J R da Silva; A Fazzio

Solid State Communications New York v.151, n.6, p.482-486, mar. 2011

New York Pergamon Press 2011

Acesso online

5
Graphene nanoribbon intercalated with hexagonal boron nitride electronic transport properties from ab initio calculations
Graphene nanoribbon intercalated with hexagonal boron nitride electronic transport properties from ab initio calculations
Material Type:
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Graphene nanoribbon intercalated with hexagonal boron nitride electronic transport properties from ab initio calculations

Jose Eduardo Padilha Renato Borges Pontes; Antonio Jose Roque da Silva; Adalberto Fazzio

SOLID STATE COMMUNICATIONS Oxford v. 173, p. 24-29, nov.2013

Oxford 2013

Acesso online

6
Stacking-dependent transport properties in few-layers graphene
Stacking-dependent transport properties in few-layers graphene
Material Type:
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Stacking-dependent transport properties in few-layers graphene

Matheus Paes Lima José Eduardo Padilha; Renato Borges Pontes; Adalberto Fazzio; Antônio José Roque da Silva

Solid State Communications v. 250, p. 70-74, 2017

Amsterdam 2017

Item não circula. Consulte sua biblioteca.(Acessar)

7
Impurity states in the narrow band-gap semiconductor n-type 'IN''SB'
Impurity states in the narrow band-gap semiconductor n-type 'IN''SB'
Material Type:
Artigo 		Adicionar ao Meu Espaço

Impurity states in the narrow band-gap semiconductor n-type 'IN''SB'

A. F. Silva N S Dantas; F B Mota; Sylvio Canuto; A Fazzio

New York v.99, n.4 , p.295-7, 1996 Solid State Communications

New York 1996

Item não circula. Consulte sua biblioteca.(Acessar)

8
Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'
Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'
Material Type:
Artigo 		Adicionar ao Meu Espaço

Theoretical investigation of the pressure induced cubic-diamond-'beta'-tin phase transition in the 'Si IND.0.5''Ge IND.0.5'

Cesar R S da Silva P Venezuela; Antonio Jose Roque da Silva; Adalberto Fazzio

Solid State Communications Oxford v. 120, n. 9-10, p. 369-373, 2001

Oxford 2001

Acesso online

9
Phenomenological band structure model of magnetic coupling in semiconductors
Phenomenological band structure model of magnetic coupling in semiconductors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Phenomenological band structure model of magnetic coupling in semiconductors

Gustavo M Dalpian Su-Huai Wei; X Z Gong; Antonio Jose Roque da Silva; Adalberto Fazzio

Solid State Communications v. 138, n. 7, p. 353-358, 2006

Oxford 2006

Acesso online

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  1. Recursos Online (6)

Autor/Criador 

  1. Padilha, J  (3)
  2. Silva, C  (2)
  3. Dantas, N  (2)
  4. Canuto, S  (2)
  5. Venezuela, P  (2)
  6. Pontes, R  (2)
  7. Dalpian, G  (2)
  8. Wei, S  (2)
  9. Mota, F  (2)
  10. Gong, X  (2)
  11. Amorim, R  (1)
  12. Lima, M  (1)
  13. Rocha, A  (1)
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  2. 2001Até2005  (2)
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Deste Autor:

  1. Silva, A
  2. Fazzio, A
  3. Padilha, J
  4. Silva, C
  5. Dantas, N

Neste Assunto:

  1. Matéria Condensada
  2. Semicondutores
  3. Ferromagnetismo
  4. Supercondutividade
  5. Magnetismo

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.