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Polarization- and time-resolved DFWM spectroscopy of the A super(2) capital sigma super(+)- X super(2) capital pi (0,0) band transitions of nascent OH radicals generated by 266nm laser photolysis of H sub(2)O sub(2)
Polarization- and time-resolved DFWM spectroscopy of the A super(2) capital sigma super(+)- X super(2) capital pi (0,0) band transitions of nascent OH radicals generated by 266nm laser photolysis of H sub(2)O sub(2)
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Polarization- and time-resolved DFWM spectroscopy of the A super(2) capital sigma super(+)- X super(2) capital pi (0,0) band transitions of nascent OH radicals generated by 266nm laser photolysis of H sub(2)O sub(2)

Maksyutenko, P ; Radi, P P ; Kozlov, D N ; Kouzov, A P

Journal of Raman spectroscopy, 2013-10, Vol.44 (10), p.1349-1355 [Periódico revisado por pares]

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2
2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy
2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy
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2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy

Li, Liang ; Wang, Weike ; Gong, Penglai ; Zhu, Xiangde ; Deng, Bei ; Shi, Xingqiang ; Gao, Guoying ; Li, Huiqiao ; Zhai, Tianyou

Advanced materials (Weinheim), 2018-04, Vol.30 (14), p.e1706771-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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3
Penta‐PdPSe: A New 2D Pentagonal Material with Highly In‐Plane Optical, Electronic, and Optoelectronic Anisotropy
Penta‐PdPSe: A New 2D Pentagonal Material with Highly In‐Plane Optical, Electronic, and Optoelectronic Anisotropy
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Penta‐PdPSe: A New 2D Pentagonal Material with Highly In‐Plane Optical, Electronic, and Optoelectronic Anisotropy

Li, Peiyang ; Zhang, Jiantian ; Zhu, Chao ; Shen, Wanfu ; Hu, Chunguang ; Fu, Wei ; Yan, Luo ; Zhou, Liujiang ; Zheng, Lu ; Lei, Hongxiang ; Liu, Zheng ; Zhao, Weina ; Gao, Pingqi ; Yu, Peng ; Yang, Guowei

Advanced materials (Weinheim), 2021-09, Vol.33 (35), p.e2102541-n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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4
2D NbOI2: A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical Properties
2D NbOI2: A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical Properties
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2D NbOI2: A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical Properties

Fang, Yuqiang ; Wang, Fakun ; Wang, Ruiqi ; Zhai, Tianyou ; Huang, Fuqiang

Advanced materials (Weinheim), 2021-07, Vol.33 (29), p.e2101505-n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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5
A Local D4h Symmetric Dysprosium(III) Single‐Molecule Magnet with an Energy Barrier Exceeding 2000 K
A Local D4h Symmetric Dysprosium(III) Single‐Molecule Magnet with an Energy Barrier Exceeding 2000 K
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A Local D4h Symmetric Dysprosium(III) Single‐Molecule Magnet with an Energy Barrier Exceeding 2000 K

Ding, Xia‐Li ; Zhai, Yuan‐Qi ; Han, Tian ; Chen, Wei‐Peng ; Ding, You‐Song ; Zheng, Yan‐Zhen

Chemistry : a European journal, 2021-02, Vol.27 (8), p.2623-2627 [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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6
Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide
Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide
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Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide

Yang, Shengxue ; Yang, Yanhan ; Wu, Minghui ; Hu, Chunguang ; Shen, Wanfu ; Gong, Yongji ; Huang, Li ; Jiang, Chengbao ; Zhang, Yongzhe ; Ajayan, Pulickel M.

Advanced functional materials, 2018-04, Vol.28 (16), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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7
Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate
Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate
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Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Yan, Yong ; Yang, Juehan ; Du, Juan ; Zhang, Xiaomei ; Liu, Yue‐Yang ; Xia, Congxin ; Wei, Zhongming

Advanced materials (Weinheim), 2021-06, Vol.33 (22), p.e2008761-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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8
Highly In‐Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity
Highly In‐Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity
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Highly In‐Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity

Pi, Lejing ; Hu, Chunguang ; Shen, Wanfu ; Li, Liang ; Luo, Peng ; Hu, Xiaozong ; Chen, Ping ; Li, Dongyan ; Li, Zexin ; Zhou, Xing ; Zhai, Tianyou

Advanced functional materials, 2021-01, Vol.31 (3), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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9
Energy‐dispersive X‐ray stress analysis under geometric constraints: exploiting the material's inherent anisotropy
Energy‐dispersive X‐ray stress analysis under geometric constraints: exploiting the material's inherent anisotropy
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Energy‐dispersive X‐ray stress analysis under geometric constraints: exploiting the material's inherent anisotropy

Genzel, Christoph ; Klaus, Manuela ; Hempel, Nico ; Nitschke-Pagel, Thomas ; Pantleon, Karen

Journal of applied crystallography, 2023-04, Vol.56 (2), p.526-538 [Periódico revisado por pares]

5 Abbey Square, Chester, Cheshire CH1 2HU, England: International Union of Crystallography

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10
Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy
Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy
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Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic Anisotropy

Yang, Seungmo ; Son, Jong Wan ; Ju, Tae‐Seong ; Tran, Duc Minh ; Han, Hee‐Sung ; Park, Sungkyun ; Park, Bae Ho ; Moon, Kyoung‐Woong ; Hwang, Chanyong

Advanced materials (Weinheim), 2023-03, Vol.35 (9), p.e2208881-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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