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Material Type: Artigo
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2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane AnisotropyLi, Liang ; Wang, Weike ; Gong, Penglai ; Zhu, Xiangde ; Deng, Bei ; Shi, Xingqiang ; Gao, Guoying ; Li, Huiqiao ; Zhai, TianyouAdvanced materials (Weinheim), 2018-04, Vol.30 (14), p.e1706771-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
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Material Type: Artigo
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Penta‐PdPSe: A New 2D Pentagonal Material with Highly In‐Plane Optical, Electronic, and Optoelectronic AnisotropyLi, Peiyang ; Zhang, Jiantian ; Zhu, Chao ; Shen, Wanfu ; Hu, Chunguang ; Fu, Wei ; Yan, Luo ; Zhou, Liujiang ; Zheng, Lu ; Lei, Hongxiang ; Liu, Zheng ; Zhao, Weina ; Gao, Pingqi ; Yu, Peng ; Yang, GuoweiAdvanced materials (Weinheim), 2021-09, Vol.33 (35), p.e2102541-n/a [Periódico revisado por pares]Weinheim: Wiley Subscription Services, IncTexto completo disponível |
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Material Type: Artigo
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2D NbOI2: A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical PropertiesFang, Yuqiang ; Wang, Fakun ; Wang, Ruiqi ; Zhai, Tianyou ; Huang, FuqiangAdvanced materials (Weinheim), 2021-07, Vol.33 (29), p.e2101505-n/a [Periódico revisado por pares]Weinheim: Wiley Subscription Services, IncTexto completo disponível |
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Material Type: Artigo
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Development and Recovery of Stress‐Induced Elastic Anisotropy During Cyclic Loading Experiment on Westerly GranitePasselègue, François. X. ; Pimienta, Lucas ; Faulkner, Daniel ; Schubnel, Alexandre ; Fortin, Jérôme ; Guéguen, YvesGeophysical research letters, 2018-08, Vol.45 (16), p.8156-8166 [Periódico revisado por pares]Washington: John Wiley & Sons, IncTexto completo disponível |
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Material Type: Artigo
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Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium ThiophosphateYan, Yong ; Yang, Juehan ; Du, Juan ; Zhang, Xiaomei ; Liu, Yue‐Yang ; Xia, Congxin ; Wei, ZhongmingAdvanced materials (Weinheim), 2021-06, Vol.33 (22), p.e2008761-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
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Material Type: Artigo
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Susceptibility-weighted imaging and quantitative susceptibility mapping in the brainLiu, Chunlei ; Li, Wei ; Tong, Karen A. ; Yeom, Kristen W. ; Kuzminski, SamuelJournal of magnetic resonance imaging, 2015-07, Vol.42 (1), p.23-41 [Periódico revisado por pares]United States: Blackwell Publishing LtdTexto completo disponível |
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Material Type: Artigo
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Sn2PO4I: An Excellent Birefringent Material with Giant Optical Anisotropy in Non π‐Conjugated PhosphateGuo, Jingyu ; Tudi, Abudukadi ; Han, Shujuan ; Yang, Zhihua ; Pan, ShilieAngewandte Chemie International Edition, 2021-11, Vol.60 (47), p.24901-24904 [Periódico revisado por pares]Weinheim: Wiley Subscription Services, IncTexto completo disponível |
8 |
Material Type: Artigo
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Energy‐dispersive X‐ray stress analysis under geometric constraints: exploiting the material's inherent anisotropyGenzel, Christoph ; Klaus, Manuela ; Hempel, Nico ; Nitschke-Pagel, Thomas ; Pantleon, KarenJournal of applied crystallography, 2023-04, Vol.56 (2), p.526-538 [Periódico revisado por pares]5 Abbey Square, Chester, Cheshire CH1 2HU, England: International Union of CrystallographyTexto completo disponível |
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Material Type: Artigo
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Influence of static alternating field demagnetization on anisotropy of magnetic susceptibility: Experiments and implicationsBiedermann, Andrea R. ; Jackson, Mike ; Bilardello, Dario ; Feinberg, Joshua M. ; Brown, Maxwell C. ; McEnroe, Suzanne A.Geochemistry, geophysics, geosystems : G3, 2017-09, Vol.18 (9), p.3292-3308 [Periódico revisado por pares]Washington: John Wiley & Sons, IncTexto completo disponível |
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Material Type: Artigo
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Magnetic Skyrmion Transistor Gated with Voltage‐Controlled Magnetic AnisotropyYang, Seungmo ; Son, Jong Wan ; Ju, Tae‐Seong ; Tran, Duc Minh ; Han, Hee‐Sung ; Park, Sungkyun ; Park, Bae Ho ; Moon, Kyoung‐Woong ; Hwang, ChanyongAdvanced materials (Weinheim), 2023-03, Vol.35 (9), p.e2208881-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |