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Refinado por: Base de dados/Biblioteca: Science Citation Index Expanded (Web of Science) remover tipo de recurso: magazinearticle remover
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1
The Impact of the Electrode Performance on the Endurance Properties of the Phase Change Memory Device
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The Impact of the Electrode Performance on the Endurance Properties of the Phase Change Memory Device

Lu, Y. Y. ; Cai, D. L. ; Chen, Y. F. ; Zheng, Y. H. ; Yan, S. ; Wu, L. ; Liu, Y. G. ; Li, Y. ; Song, Z. T.

IEEE transactions on device and materials reliability, 2019-03, Vol.19 (1), p.164-168 [Periódico revisado por pares]

New York: IEEE

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Water-Saving Strategies for the CPI
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Water-Saving Strategies for the CPI

Liu, Y A

Chemical Engineering, 2012-05, Vol.119 (5), p.34-41

New York: Access Intelligence LLC

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3
Electromigration Effect on Kinetics of Cu-Sn Intermetallic Compound Growth in Lead-Free Solder Joint
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Electromigration Effect on Kinetics of Cu-Sn Intermetallic Compound Growth in Lead-Free Solder Joint

Fu, Z. W. ; Zhou, B. ; Yao, R. H. ; Liu, Y. R. ; Li, X. P.

IEEE transactions on device and materials reliability, 2017-12, Vol.17 (4), p.773-779 [Periódico revisado por pares]

New York: IEEE

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4
Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene)
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Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene)

Liu, Y. R. ; Liao, R. ; Lai, P. T. ; Yao, R. H.

IEEE transactions on device and materials reliability, 2012-03, Vol.12 (1), p.58-62 [Periódico revisado por pares]

New York: IEEE

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5
Low-Operating-Voltage Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene) With Hafnium Oxide as the Gate Dielectric
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Low-Operating-Voltage Polymer Thin-Film Transistors Based on Poly(3-Hexylthiophene) With Hafnium Oxide as the Gate Dielectric

Liu, Y R ; Deng, L F ; Yao, R H ; Lai, P T

IEEE transactions on device and materials reliability, 2010-06, Vol.10 (2), p.233-237 [Periódico revisado por pares]

New York: IEEE

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6
Influence of Octadecyltrichlorosilane Surface Modification on Electrical Properties of Polymer Thin-Film Transistors Studied by Capacitance-Voltage Analysis
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Influence of Octadecyltrichlorosilane Surface Modification on Electrical Properties of Polymer Thin-Film Transistors Studied by Capacitance-Voltage Analysis

Liu, Y R ; Lai, P T ; Yao, R H ; Deng, L F

IEEE transactions on device and materials reliability, 2011-03, Vol.11 (1), p.60-65 [Periódico revisado por pares]

New York: IEEE

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7
Routing Correlated Data with Fusion Cost in Wireless Sensor Networks
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Routing Correlated Data with Fusion Cost in Wireless Sensor Networks

Luo, H. ; Liu, Y. ; Das, S.K.

IEEE transactions on mobile computing, 2006-11, Vol.5 (11), p.1620-1632 [Periódico revisado por pares]

New York, NY: IEEE

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8
Improved Performance of Pentacene OTFTs With HfLaO Gate Dielectric by Using Fluorination and Nitridation
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Improved Performance of Pentacene OTFTs With HfLaO Gate Dielectric by Using Fluorination and Nitridation

Deng, L. F. ; Liu, Y. R. ; Choi, H. W. ; Che, C. M. ; Lai, P. T.

IEEE transactions on device and materials reliability, 2012-06, Vol.12 (2), p.520-528 [Periódico revisado por pares]

New York: IEEE

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9
Up-to-Date Tools for Water-System Optimization
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Up-to-Date Tools for Water-System Optimization

Liu, YA ; Lucas, Bruce ; Mann, James

Chemical Engineering, 2004-01, Vol.111 (1), p.30-30

New York: Access Intelligence LLC

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10
Effects of Annealing Temperature and Gas on Pentacene OTFTs With HfLaO as Gate Dielectric
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Effects of Annealing Temperature and Gas on Pentacene OTFTs With HfLaO as Gate Dielectric

Deng, L. F. ; Liu, Y. R. ; Choi, H. W. ; Xu, J. P. ; Che, C. M. ; Lai, P. T.

IEEE transactions on device and materials reliability, 2012-03, Vol.12 (1), p.107-112 [Periódico revisado por pares]

New York: IEEE

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