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Physics-of-Failure Lifetime Prediction Models for Wire Bond Interconnects in Power Electronic Modules
Physics-of-Failure Lifetime Prediction Models for Wire Bond Interconnects in Power Electronic Modules
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Physics-of-Failure Lifetime Prediction Models for Wire Bond Interconnects in Power Electronic Modules

Li Yang ; Agyakwa, P. A. ; Johnson, C. M.

IEEE transactions on device and materials reliability, 2013-03, Vol.13 (1), p.9-17 [Periódico revisado por pares]

IEEE

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2
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device
Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device
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Failure and Reliability Analysis of a SiC Power Module Based on Stress Comparison to a Si Device

Borong Hu ; Ortiz Gonzalez, Jose ; Li Ran ; Hai Ren ; Zheng Zeng ; Wei Lai ; Bing Gao ; Alatise, Olayiwola ; Hua Lu ; Bailey, Christopher ; Mawby, Phil

IEEE transactions on device and materials reliability, 2017-12, Vol.17 (4), p.727-737 [Periódico revisado por pares]

New York: IEEE

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3
Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
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Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories

Pesic, Milan ; Schroeder, Uwe ; Slesazeck, Stefan ; Mikolajick, Thomas

IEEE transactions on device and materials reliability, 2018-06, Vol.18 (2), p.154-162 [Periódico revisado por pares]

IEEE

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4
Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling
Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling
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Comparative Thermal and Structural Characterization of Sintered Nano-Silver and High-Lead Solder Die Attachments During Power Cycling

Dai, Jingru ; Li, Jianfeng ; Agyakwa, Pearl ; Corfield, Martin ; Johnson, Christopher Mark

IEEE transactions on device and materials reliability, 2018-06, Vol.18 (2), p.256-265 [Periódico revisado por pares]

IEEE

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5
Design and Evaluation of an Efficient Schmitt Trigger-Based Hardened Latch in CNTFET Technology
Design and Evaluation of an Efficient Schmitt Trigger-Based Hardened Latch in CNTFET Technology
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Design and Evaluation of an Efficient Schmitt Trigger-Based Hardened Latch in CNTFET Technology

Moghaddam, Majid ; Moaiyeri, Mohammad Hossein ; Eshghi, Mohammad

IEEE transactions on device and materials reliability, 2017-03, Vol.17 (1), p.267-277 [Periódico revisado por pares]

New York: IEEE

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6
Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects
Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects
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Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Huifeng Chen ; Bing Ji ; Pickert, Volker ; Wenping Cao

IEEE transactions on device and materials reliability, 2014-03, Vol.14 (1), p.220-228 [Periódico revisado por pares]

New York: IEEE

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7
Technological Journey Towards Reliable Microheater Development for MEMS Gas Sensors: A Review
Technological Journey Towards Reliable Microheater Development for MEMS Gas Sensors: A Review
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Technological Journey Towards Reliable Microheater Development for MEMS Gas Sensors: A Review

Bhattacharyya, P.

IEEE transactions on device and materials reliability, 2014-06, Vol.14 (2), p.589-599 [Periódico revisado por pares]

New York: IEEE

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8
Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects
Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects
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Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects

Suk-Kyu Ryu ; Kuan-Hsun Lu ; Xuefeng Zhang ; Jang-Hi Im ; Ho, Paul S ; Rui Huang

IEEE transactions on device and materials reliability, 2011-03, Vol.11 (1), p.35-43 [Periódico revisado por pares]

New York: IEEE

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9
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
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Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Meneghesso, G. ; Verzellesi, G. ; Danesin, F. ; Rampazzo, F. ; Zanon, F. ; Tazzoli, A. ; Meneghini, M. ; Zanoni, E.

IEEE transactions on device and materials reliability, 2008-06, Vol.8 (2), p.332-343 [Periódico revisado por pares]

IEEE

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10
Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors
Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors
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Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

Conley, J F

IEEE transactions on device and materials reliability, 2010-12, Vol.10 (4), p.460-475 [Periódico revisado por pares]

New York: IEEE

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