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Resultados de 1 a 10 de 16  para Produção Intelectual da USP

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Refinado por: Nome da Publicação: Microelectronics Technology and Devices SBMICRO 2002 remover
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1
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K
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Comparison between 0.13Mm partially-depleted silicon-on-insulator technology with floating body operation at 300 K and 90 K

Marcelo Antonio Pavanello João Antonio Martino 1959-; A Mercha; J.M Rafi; Eddy Simoen; Cor Claeys; H Van Meer; K De Meyer; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

2
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures
3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures
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3D topography in self-sustained membranes of SiOxNy obtained by PECVD technique at low temperatures

Marcelo Nelson Páez Carreño 1962- Alexandre Tavares Lopes; Marco Isaías Alayo Chávez 1971-; Inés Pereyra 1947-; International Symposium on Microelectronics Technology and Devices (17th 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

3
Highly conductive n-type MC-Si:H films deposited at very low temperature
Highly conductive n-type MC-Si:H films deposited at very low temperature
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Highly conductive n-type MC-Si:H films deposited at very low temperature

Alexandre Mantovani Nardes Ely Antonio Tadeu Dirani; Adnei Melges de Andrade 1943-; Fernando Josepetti Fonseca 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17th 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

4
Implementation of an optical integrated pressure sensor and experimental results
Implementation of an optical integrated pressure sensor and experimental results
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Implementation of an optical integrated pressure sensor and experimental results

Acácio Luiz Siarkowski Douglas Anderson Pereira Bulla; Nilton Itiro Morimoto 1962-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto alegre)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

5
Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K
Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K
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Influence of the back gate voltage on the total series resistence of fully depleted SOI MOSFETs at 300 K and 77 K

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

6
Effect of stencil alignment on the solder beading in SMT process
Effect of stencil alignment on the solder beading in SMT process
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Effect of stencil alignment on the solder beading in SMT process

Flávio Sousa Silva Mauricio Massazumi Oka; International Symposium on Microelectronics Technology and Devices SBMICRO 2002, Porto Alegre, 2002 (17 2002 Porto Alegre)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

7
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures
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Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures

Milene Galeti Marcelo Antonio Pavanello; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

8
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor
Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor
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Determination of the silicon film doping concentration and the back interface oxide charge density using SOI-NMOS gate capacitor

Victor Sonnenberg João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO 2002 (17 2002 Porto Alegre, RS)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

9
High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C)
High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C)
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High density-PECVD silicon oxide deposition by TEOS and oxygen at low temperature (375 o. C)

Carlos Eduardo Viana J.L.R Santos; Nilton Itiro Morimoto 1962-; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre)

Morimoto, N.I.; Ribas, R.P.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

10
Semiconductor light emitting diodes an empirical study for use in fiber optic gyroscopes
Semiconductor light emitting diodes an empirical study for use in fiber optic gyroscopes
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Semiconductor light emitting diodes an empirical study for use in fiber optic gyroscopes

Eduardo dos Santos Ferreira Nilton Itiro Morimoto 1962-; Ricardo Teixeira de Carvalho; International Symposium on Microelectronics Technology and Devices SBMICRO (17 2002 Porto Alegre)

Morimoto, N.I.; Ribas, P.R.; Verdonck, P.B., eds Microelectronics Technology and Devices SBMICRO 2002 Pennington : The Electrochemical Society, 2002

Pennington The Electrochemical Society 2002

Item não circula. Consulte sua biblioteca.(Acessar)

Resultados de 1 a 10 de 16  para Produção Intelectual da USP

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