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Refinado por: data de publicação: 1977Até1991 remover idioma: Inglês remover
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1
Lattice response around a silicon vacancy
Lattice response around a silicon vacancy
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Lattice response around a silicon vacancy

A Dal Pino Junior E C F Silva; J. R Leite (José Roberto); Brazilian School of Semiconductors Physics (4. 1990 Singapure)

Brazilian School of Semiconductors Physics, 4 Singapure : World Scientific, 1990

Singapure World Scientific 1990

Item não circula. Consulte sua biblioteca.(Acessar)

2
Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium

H W L Alves J. R Leite (José Roberto); J L A Alves; Brazilian School on Semiconductors Physics (4. 1990 Singapure)

Brazilian School on Semiconductors Physics, 4 Singapure : World Scientific, 1990

Singapure World Scientific 1990

Item não circula. Consulte sua biblioteca.(Acessar)

3
Ab-initio cluster calculation of hyperfine interactions and total energy surfaces for n in diamond, silicon and germanium
Ab-initio cluster calculation of hyperfine interactions and total energy surfaces for n in diamond, silicon and germanium
Material Type:
Relatório Técnico 		Adicionar ao Meu Espaço

Ab-initio cluster calculation of hyperfine interactions and total energy surfaces for n in diamond, silicon and germanium

A Fazzio C R M Cunha

São Paulo Ifusp 1991

Item não circula. Consulte sua biblioteca.(Acessar)

4
Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'
Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'
Material Type:
Livro 		Adicionar ao Meu Espaço

Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'

R P Camata L M R Scolfaro; José Manuel de Vasconcelos Martins; J. R Leite (José Roberto); C A C Mendonca; E A Meneses; I. F. L Dias; J C Bezerra; A. G Oliveira

Singapura : World Scientific, 1991 Festschrift in Honor of R C Leite

Singapura World Scientific 1991

Item não circula. Consulte sua biblioteca.(Acessar)

5
Theoretical investigation of model-polymers for eumelanius. I. Finite and infinite polymers
Theoretical investigation of model-polymers for eumelanius. I. Finite and infinite polymers
Material Type:
Relatório Técnico 		Adicionar ao Meu Espaço

Theoretical investigation of model-polymers for eumelanius. I. Finite and infinite polymers

D S Galvao Marília Junqueira Caldas

Sao Paulo If-Usp 1990

Item não circula. Consulte sua biblioteca.(Acessar)

6
Back-angle anomaly and coupling between seven reaction channels of 'ANTPOT.12 C'+'ANTPOT.24 MG' using agebraic scattering theory
Back-angle anomaly and coupling between seven reaction channels of 'ANTPOT.12 C'+'ANTPOT.24 MG' using agebraic scattering theory
Material Type:
Relatório Técnico 		Adicionar ao Meu Espaço

Back-angle anomaly and coupling between seven reaction channels of 'ANTPOT.12 C'+'ANTPOT.24 MG' using agebraic scattering theory

Alinka Lepine-Szily M M Obuti; Rubens Lichtenthäler; J. M Oliveira Junior; A C C Villari

São Paulo If-Usp 1990

Item não circula. Consulte sua biblioteca.(Acessar)

7
Magnetotransport properties of epitaxial 'SN''AL IND.X''GA IND.1-X''AS' grown on 'SI' by metalorganic vapor phase epitaxy (movpe)
Magnetotransport properties of epitaxial 'SN''AL IND.X''GA IND.1-X''AS' grown on 'SI' by metalorganic vapor phase epitaxy (movpe)
Material Type:
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Magnetotransport properties of epitaxial 'SN''AL IND.X''GA IND.1-X''AS' grown on 'SI' by metalorganic vapor phase epitaxy (movpe)

Pierre Basmaji Máximo Siu Li; G L Allan; D Lavielle; J C Portal; Brazilian School of Semiconductor Physics (4. 1989 Belo Horizonte)

Proceedings Singapore : World Scientific, 1990

Singapore World Scientific 1990

Localização: IFSC - Inst. Física de São Carlos    (PROD000978 ) e outros locais(Acessar)

8
Geometry and stability of the ' ('ga''as') IND.N'' ('in''as') IND.N' and ' ('ga'P) IND.N'' ('in'P) IND.N' ultrathin superlattices
Geometry and stability of the ' ('ga''as') IND.N'' ('in''as') IND.N' and ' ('ga'P) IND.N'' ('in'P) IND.N' ultrathin superlattices
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Geometry and stability of the ' ('ga''as') IND.N'' ('in''as') IND.N' and ' ('ga'P) IND.N'' ('in'P) IND.N' ultrathin superlattices

A. C. Ferraz (Armando Corbani) S K Figueiredo; Brazilian School of Semiconductors Physics (4. 1990 Singapure)

Brazilian School of Semiconductors Physics, 4 Singapure : World Scientific, 1990

Singapure World Scientific 1990

Item não circula. Consulte sua biblioteca.(Acessar)

9
Phonon meam free path evaluation in high tc oxides
Phonon meam free path evaluation in high tc oxides
Material Type:
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Phonon meam free path evaluation in high tc oxides

R. F. Jardim (Renato Figueiredo) S Gamas; A C Bento; F L A Machado; International Conference on Transport Properties of Superconductors (1990 Rio de Janeiro)

International Conference on Transport Properties of Superconductors 1990

Rio de Janeiro 1990

Item não circula. Consulte sua biblioteca.(Acessar)

10
On the shubnikov-de hall effect in semiconductors
On the shubnikov-de hall effect in semiconductors
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

On the shubnikov-de hall effect in semiconductors

André Bohomoletz Henriques Brazilian School of Semiconductors Physics (4. 1990 Singapure)

Electronic Structure of Atoms, Molecules and Solids Singapure : World Scientific, 1990

Singapure World Scientific 1990

Item não circula. Consulte sua biblioteca.(Acessar)

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