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Refinado por: Nome da Publicação: Ieee Transactions on Electron devices remover
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1
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
Material Type:
Artigo 		Adicionar ao Meu Espaço

Transient effects in accumulation mode p-channel soi - mosfets operating at 77k

João Antonio Martino 1959- Antônio Luís Pacheco Rotondaro; Eddy Simoen; Ulf Magnusson; Cor Claeys

New York v.41, n.4 , p.519-23, apr. 1994 Ieee Transactions on Electron Devices

New York 1994

Item não circula. Consulte sua biblioteca.(Acessar)

2
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
Material Type:
Artigo 		Adicionar ao Meu Espaço

Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor

Antonio Cerdeira Miguel A Alemán; Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; Laurent Vancaillie

IEEE Transactions on Electron Devices v.52, n.5, p.967-972, 2005

New York 2005

Item não circula. Consulte sua biblioteca.(Acessar)

3
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature
Material Type:
Artigo 		Adicionar ao Meu Espaço

Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature

Paula Ghedini Der Agopian Eddy Simoen; A Vandooren; Rita Rooyackers; João Antonio Martino 1959-

IEEE Transactions on Electron Devices v. 60, n. 8, p. 2493-2497, Aug. 2013

2013

Item não circula. Consulte sua biblioteca.(Acessar)

4
Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs
Material Type:
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Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs

Paula Ghedini Der Agopian João Antonio Martino 1959-; Sara Dereste dos Santos; Rita Rooyackers; A Vandoren

IEEE Transactions on Electron Devices v. 62, n. 1, p. 16-22, Jan. 2015

2015

Item não circula. Consulte sua biblioteca.(Acessar)

5
TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETs

Rudolf Theoderich Bühler Benjamin Vincent; Liesbeth J Witters; Paola Favia; Geert Eneman; João Antonio Martino 1959-

IEEE Transactions on Electron Devices v. 62, n. 4, p. 1079-1084, April 2015

2015

Item não circula. Consulte sua biblioteca.(Acessar)

6
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
Material Type:
Artigo 		Adicionar ao Meu Espaço

Transient effects in accumulation mode p-channel soi - mosfets operating at 77k

João Antonio Martino 1959- Antônio Luís Pacheco Rotondaro; Eddy Simoen; Ulf Magnusson; Cor Claeys

New York v.41, n.4 , p.519-23, apr. 1994 Ieee Transactions on Electron Devices

New York 1994

Item não circula. Consulte sua biblioteca.(Acessar)

7
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
Material Type:
Artigo 		Adicionar ao Meu Espaço

Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor

Antonio Cerdeira Miguel A Alemán; Marcelo Antonio Pavanello; João Antonio Martino 1959-; Denis Flandre; Laurent Vancaillie

IEEE Transactions on Electron Devices v.52, n.5, p.967-972, 2005

New York 2005

Item não circula. Consulte sua biblioteca.(Acessar)

8
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs
Material Type:
Artigo 		Adicionar ao Meu Espaço

On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

Sara Dereste dos Santos Talitha Nicoletti; João Antonio Martino 1959-; Marc Aoulaiche; Anabela Veloso; Malgorzata Jurczak; Eddy Simoen; Cor Claeys

IEEE Transactions on Electron Devices v. 60, n. 1, p. 444-450, Jan 2013

2013

Item não circula. Consulte sua biblioteca.(Acessar)

9
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes

Alberto Vinicius de Oliveira Eddy Simoen Mitard Jerome; Paula Ghedini Der Agopian; Robert Langer; Liesbeth J Witters; João Antonio Martino 1959-

IEEE Transactions on Electron Devices v. 63, n. 10, p. 4031-4037, Oct. 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

10
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source

Felipe S Neves Paula Ghedini Der Agopian; B Cretu; Rita Rooyackers; A Vandooren; Eddy Simoen; Aaron Thean; João Antonio Martino 1959-

IEEE Transactions on Electron Devices v. 63, n. 4, p. 1658-1665, Abr 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

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