1
Material Type:
Artigo
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Márcio Dalla Valle Martino Cor Claeys; Paula Ghedini Der Agopian; Rita Rooyackers; Eddy Simoen; João Antonio Martino 1959-
Semiconductor Science and Technology v. 33, n. 7, p. 075012, 2018
2018
Item não circula. Consulte sua biblioteca.(Acessar)
2
Material Type:
Artigo
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
Márcio Dalla Valle Martino João Antonio Martino 1959-; Paula Ghedini Der Agopian; A Vandooren; Rita Rooyackers; Eddy Simoen; Cor Claeys
Semiconductor Science and Technology v. 31, n. 5, 055001, 2016
2016
Item não circula. Consulte sua biblioteca.(Acessar)
3
Material Type:
Artigo
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Márcio Dalla Valle Martino Cor Claeys; Rita Rooyackers; Eddy Simoen; Paula Ghedini Der Agopian; A Vandooren; João Antonio Martino 1959-
Semiconductor Science and Technology v. 32, n.5, p. 055015, 2017
2017
Item não circula. Consulte sua biblioteca.(Acessar)
4
Material Type:
Artigo
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Rudolf Theoderich Bühler R Giacomini; Marcelo Antonio Pavanello; João Antonio Martino 1959-
Semiconductor Science and Technology v. 24, n.11, 2009
Bristol; Woodbury 2009
Item não circula. Consulte sua biblioteca.(Acessar)
5
Material Type:
Artigo
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies
Rodrigo do Nascimento Toledo João Antonio Martino 1959-; Paula Ghedini Der Agopian
Semiconductor Science and Technology Bristol v. 38, n. 9, p. 1-12, 2023. Article nº 095013
Bristol 2023
Item não circula. Consulte sua biblioteca.(Acessar)
6
Material Type:
Artigo
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Rudolf Theoderich Bühler R Giacomini; Marcelo Antonio Pavanello; João Antonio Martino 1959-
Semiconductor Science and Technology v. 24, n.11, 2009
Bristol; Woodbury 2009
Item não circula. Consulte sua biblioteca.(Acessar)
7
Material Type:
Artigo
Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
Marcelo Antonio Pavanello Michelly de Souza; Thales Augusto Ribeiro; João Antonio Martino 1959-; Denis Flandre
Semiconductor Science and Technology v. 31, n. 11, p. 114005, 2016
2016
Item não circula. Consulte sua biblioteca.(Acessar)
8
Material Type:
Artigo
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K
Luís Felipe Vicentis Caparroz Paula Ghedini Der Agopian; Cor Claeys; Eddy Simoen; Caio Cesar Mendes Bordallo; João Antonio Martino 1959-
Semiconductor Science and Technology v. 33, n. 6, p. 065003, 2018
2018
Item não circula. Consulte sua biblioteca.(Acessar)
9
Material Type:
Artigo
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
Caio Cesar Mendes Bordallo João Antonio Martino 1959-; Fernando Ferrari Teixeira; Marcilei Aparecida Guazzelli da Silveira; Paula Ghedini Der Agopian; Eddy Simoen; Cor Claeys
Semiconductor Science and Technology v. 29, n. 12, p. 125015
2014
Item não circula. Consulte sua biblioteca.(Acessar)
10
Material Type:
Artigo
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes
Alberto Vinicius de Oliveira Paula Ghedini Der Agopian; Eddy Simoen; Robert Langer; Nadine Collaert; Aaron Thean; Cor Claeys; João Antonio Martino 1959-
Semiconductor Science and Technology v. 31, n. 11, p. 114002 , 2016
2016
Item não circula. Consulte sua biblioteca.(Acessar)