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1
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Material Type:
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Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

Márcio Dalla Valle Martino Cor Claeys; Paula Ghedini Der Agopian; Rita Rooyackers; Eddy Simoen; João Antonio Martino 1959-

Semiconductor Science and Technology v. 33, n. 7, p. 075012, 2018

2018

Item não circula. Consulte sua biblioteca.(Acessar)

2
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
Material Type:
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Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures

Márcio Dalla Valle Martino João Antonio Martino 1959-; Paula Ghedini Der Agopian; A Vandooren; Rita Rooyackers; Eddy Simoen; Cor Claeys

Semiconductor Science and Technology v. 31, n. 5, 055001, 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

3
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures
Material Type:
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Analysis of current mirror circuits designed with line tunnel FET devices at different temperatures

Márcio Dalla Valle Martino Cor Claeys; Rita Rooyackers; Eddy Simoen; Paula Ghedini Der Agopian; A Vandooren; João Antonio Martino 1959-

Semiconductor Science and Technology v. 32, n.5, p. 055015, 2017

2017

Item não circula. Consulte sua biblioteca.(Acessar)

4
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Material Type:
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Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape

Rudolf Theoderich Bühler R Giacomini; Marcelo Antonio Pavanello; João Antonio Martino 1959-

Semiconductor Science and Technology v. 24, n.11, 2009

Bristol; Woodbury 2009

Item não circula. Consulte sua biblioteca.(Acessar)

5
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies
Material Type:
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Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies

Rodrigo do Nascimento Toledo João Antonio Martino 1959-; Paula Ghedini Der Agopian

Semiconductor Science and Technology Bristol v. 38, n. 9, p. 1-12, 2023. Article nº 095013

Bristol 2023

Item não circula. Consulte sua biblioteca.(Acessar)

6
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape
Material Type:
Artigo 		Adicionar ao Meu Espaço

Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape

Rudolf Theoderich Bühler R Giacomini; Marcelo Antonio Pavanello; João Antonio Martino 1959-

Semiconductor Science and Technology v. 24, n.11, 2009

Bristol; Woodbury 2009

Item não circula. Consulte sua biblioteca.(Acessar)

7
Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
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Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature

Marcelo Antonio Pavanello Michelly de Souza; Thales Augusto Ribeiro; João Antonio Martino 1959-; Denis Flandre

Semiconductor Science and Technology v. 31, n. 11, p. 114005, 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

8
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K
Material Type:
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Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

Luís Felipe Vicentis Caparroz Paula Ghedini Der Agopian; Cor Claeys; Eddy Simoen; Caio Cesar Mendes Bordallo; João Antonio Martino 1959-

Semiconductor Science and Technology v. 33, n. 6, p. 065003, 2018

2018

Item não circula. Consulte sua biblioteca.(Acessar)

9
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
Material Type:
Artigo 		Adicionar ao Meu Espaço

Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation

Caio Cesar Mendes Bordallo João Antonio Martino 1959-; Fernando Ferrari Teixeira; Marcilei Aparecida Guazzelli da Silveira; Paula Ghedini Der Agopian; Eddy Simoen; Cor Claeys

Semiconductor Science and Technology v. 29, n. 12, p. 125015

2014

Item não circula. Consulte sua biblioteca.(Acessar)

10
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes
Material Type:
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Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes

Alberto Vinicius de Oliveira Paula Ghedini Der Agopian; Eddy Simoen; Robert Langer; Nadine Collaert; Aaron Thean; Cor Claeys; João Antonio Martino 1959-

Semiconductor Science and Technology v. 31, n. 11, p. 114002 , 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Agopian, P
  3. Simoen, E
  4. Claeys, C
  5. Rooyackers, R

Neste Assunto:

  1. Semicondutores
  2. Microeletrônica
  3. Engineering, Electrical & Electronic
  4. Engineering
  5. Physical Sciences

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.