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Refinado por: Base de dados/Biblioteca: Institute of Physics IOPscience extra remover assunto: Science & Technology - Other Topics remover Physical Sciences remover
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New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles
New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles
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New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

Bouravleuv, A ; Ilkiv, I ; Reznik, R ; Kotlyar, K ; Soshnikov, I ; Cirlin, G ; Brunkov, P ; Kirilenko, D ; Bondarenko, L ; Nepomnyaschiy, A ; Gruznev, D ; Zotov, A ; Saranin, A ; Dhaka, V ; Lipsanen, H

Nanotechnology, 2018-01, Vol.29 (4), p.045602-045602 [Periódico revisado por pares]

England: IOP Publishing

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2
Thermal decomposition of GaAs nanowires
Thermal decomposition of GaAs nanowires
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Thermal decomposition of GaAs nanowires

Ilkiv, Igor ; Kirilenko, Demid ; Kotlyar, Konstantin ; Bouravleuv, Alexey

Nanotechnology, 2020-01, Vol.31 (5), p.55701-055701 [Periódico revisado por pares]

IOP Publishing

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3
Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on silicon
Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on silicon
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Comparison of GaAs nanowire growth seeded by Ag and Au colloidal nanoparticles on silicon

Berdnikov, Yury ; Ilkiv, Igor ; Sibirev, Nickolay ; Ubyivovk, Evgeniy ; Bouravleuv, Alexei

Nanotechnology, 2020-09, Vol.31 (37), p.374005-374005 [Periódico revisado por pares]

England: IOP Publishing

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4
High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation
High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation
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High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag–In alloy segregation

Liu, Lei ; Pan, Dong ; Wen, Lianjun ; Zhuo, Ran ; Zhao, Jianhua

Nanotechnology, 2023-05, Vol.34 (22), p.225701 [Periódico revisado por pares]

England: IOP Publishing

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5
Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots
Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots
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Size control of InP nanowires by in situ annealing and its application to the formation of InAsP quantum dots

Sasaki, Masahiro ; Akamatsu, Tomoya ; Tomioka, Katsuhiro ; Motohisa, Junichi

Nanotechnology, 2024-05, Vol.35 (19), p.195604 [Periódico revisado por pares]

England

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6
In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowires
In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowires
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In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowires

Balasubramanian, Ganapathi Prabhu Sai ; Lebedkina, Elizaveta ; Goktas, Nebile Isik ; Wagner, Jakob Birkedal ; Hansen, Ole ; LaPierre, Ray ; Semenova, Elizaveta ; Mølhave, Kristian ; Beleggia, Marco ; Fiordaliso, Elisabetta Maria

Nanotechnology, 2022-11, Vol.33 (47), p.475705 [Periódico revisado por pares]

IOP Publishing

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7
Effect of crystal structure on the Young’s modulus of GaP nanowires
Effect of crystal structure on the Young’s modulus of GaP nanowires
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Effect of crystal structure on the Young’s modulus of GaP nanowires

Alekseev, Prokhor A ; Borodin, Bogdan R ; Geydt, Pavel ; Khayrudinov, Vladislav ; Bespalova, Kristina ; Kirilenko, Demid A ; Reznik, Rodion R ; Nashchekin, Alexey V ; Haggrén, Tuomas ; Lähderanta, Erkki ; Cirlin, George E ; Lipsanen, Harri ; Dunaevskiy, Mikhail S

Nanotechnology, 2021-09, Vol.32 (38), p.385706 [Periódico revisado por pares]

IOP Publishing

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8
Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si
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Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si

Bolshakov, A D ; Fedorov, V V ; Shugurov, K Yu ; Mozharov, A M ; Sapunov, G A ; Shtrom, I V ; Mukhin, M S ; Uvarov, A V ; Cirlin, G E ; Mukhin, I S

Nanotechnology, 2019-09, Vol.30 (39), p.395602-395602 [Periódico revisado por pares]

England: IOP Publishing

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