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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Artigo
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On the bulk β-Ga2O3 single crystals grown by the Czochralski methodGalazka, Zbigniew ; Irmscher, Klaus ; Uecker, Reinhard ; Bertram, Rainer ; Pietsch, Mike ; Kwasniewski, Albert ; Naumann, Martin ; Schulz, Tobias ; Schewski, Robert ; Klimm, Detlef ; Bickermann, MatthiasJournal of crystal growth, 2014-10, Vol.404, p.184-191 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 2 |
Material Type: Artigo
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Access and in situ growth of phosphorene-precursor black phosphorusKöpf, Marianne ; Eckstein, Nadine ; Pfister, Daniela ; Grotz, Carolin ; Krüger, Ilona ; Greiwe, Magnus ; Hansen, Thomas ; Kohlmann, Holger ; Nilges, TomJournal of crystal growth, 2014-11, Vol.405, p.6-10 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 3 |
Material Type: Artigo
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Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solutionSaxena, P.K. ; Srivastava, P. ; Srivastava, AnshikaJournal of crystal growth, 2024-03, Vol.630, p.127584, Article 127584 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
| 4 |
Material Type: Artigo
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Analyzing structure loss in Czochralski silicon growth: Root causes investigation through surface examinationHendawi, Rania ; Di Sabatino, MarisaJournal of crystal growth, 2024-03, Vol.629, p.127564, Article 127564 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
| 5 |
Material Type: Artigo
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Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methodsSumiya, Masatomo ; Fujikura, Hajime ; Nakano, Yoshitaka ; Yashiro, Shuhei ; Koide, Yasuo ; Honda, TohruJournal of crystal growth, 2024-06, Vol.635, p.127701, Article 127701 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
| 6 |
Material Type: Artigo
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High temperature solution phase diagram of lead zirconate titanateFratello, Vincent J. ; Ko, Song WonJournal of crystal growth, 2024-06, Vol.635, p.127671, Article 127671 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
| 7 |
Material Type: Artigo
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Formation mechanism of two-dimensional hexagonal silica on SiO2/Si substrateMaisha, Nuzhat ; Ogunbiyi, Olugbenga ; Gao, Guanhui ; Sun, Mingyuan ; Puretzky, Alexander ; Li, Bo ; Yang, YingchaoJournal of crystal growth, 2024-05, Vol.634 (1), p.127685, Article 127685 [Periódico revisado por pares]United States: Elsevier B.VTexto completo disponível |
| 8 |
Material Type: Artigo
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Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealingMiyake, Hideto ; Lin, Chia-Hung ; Tokoro, Kenta ; Hiramatsu, KazumasaJournal of crystal growth, 2016-12, Vol.456, p.155-159 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 9 |
Material Type: Artigo
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Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxyOshima, Yuichi ; Vίllora, Encarnaciόn G. ; Shimamura, KiyoshiJournal of crystal growth, 2015-01, Vol.410, p.53-58 [Periódico revisado por pares]Texto completo disponível |
| 10 |
Material Type: Artigo
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Growth and characterization of AlInN/GaN superlatticesXue, Haotian ; Palmese, Elia ; Sekely, Ben J. ; Little, Brian D. ; Kish, Fred A. ; Muth, John F. ; Wierer, Jonathan J.Journal of crystal growth, 2024-03, Vol.630, p.127567, Article 127567 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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