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Resonant states in 13C and 16,17O at high excitation energy
Resonant states in 13C and 16,17O at high excitation energy
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Resonant states in 13C and 16,17O at high excitation energy

Rodrigues, M R D ; Borello-Lewin, T ; Miyake, H ; Duarte, J L M ; Rodrigues, C L ; Horodynski-Matsushigue, L B ; Ukita, G M ; Cappuzzello, F ; Cavallaro, M ; Foti, A ; Agodi, C ; Cunsolo, A ; Carbone, D ; Bondi, M ; De Napoli, M ; Roeder, B T ; Linares, R ; Lombardo, I

Journal of physics. Conference series, 2014, Vol.569 (1) [Periódico revisado por pares]

Bristol: IOP Publishing

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2
Analysis of the Self-Heating Effect in UTBOX Devices
Analysis of the Self-Heating Effect in UTBOX Devices
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Analysis of the Self-Heating Effect in UTBOX Devices

Rodrigues, M. ; Cruz, E. O. ; Galeti, M. ; Martino, J. A.

ECS transactions, 2012, Vol.49 (1), p.153-160

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UTBOX SOI Devices with High-k Gate Dielectric Under Analog Perfomance
UTBOX SOI Devices with High-k Gate Dielectric Under Analog Perfomance
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UTBOX SOI Devices with High-k Gate Dielectric Under Analog Perfomance

Galeti, M. ; Rodrigues, M. ; Aoulaiche, M. ; Collaert, N. ; Simoen, E. ; Claeys, C. ; Martino, J. A.

ECS transactions, 2012, Vol.49 (1), p.119-126

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4
AFM Study of the Corrosion of Pipeline Steel in Organic Compounds Extracted from Soil
AFM Study of the Corrosion of Pipeline Steel in Organic Compounds Extracted from Soil
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AFM Study of the Corrosion of Pipeline Steel in Organic Compounds Extracted from Soil

Yasakau, Kyril A. ; Weber, Cristina Rejane ; Rodrigues, Luciana M. ; Zheludkevich, Mikhail ; Ferreira, Mario Guereiro ; Dick, Luís Frederico P.

ECS transactions, 2008, Vol.11 (22), p.107-119

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5
TiN/HfSiON for Analog Applications of nMuGFETs
TiN/HfSiON for Analog Applications of nMuGFETs
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TiN/HfSiON for Analog Applications of nMuGFETs

Rodrigues, Michele ; Galeti, Milene ; Martino, Joao A. ; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor

ECS transactions, 2011, Vol.35 (5), p.253-258

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SOI n- and pMuGFET Devices with Different TiN Metal Gate Thickness under Influence of Sidewall Crystal Orientation
SOI n- and pMuGFET Devices with Different TiN Metal Gate Thickness under Influence of Sidewall Crystal Orientation
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SOI n- and pMuGFET Devices with Different TiN Metal Gate Thickness under Influence of Sidewall Crystal Orientation

Rodrigues, Michele ; Galeti, Milene ; Martino, João A. ; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor

ECS transactions, 2011, Vol.39 (1), p.215-222

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7
Fin Pitch Impact on Biaxial/Uniaxial Strain Engineering of Triple-Gate Devices
Fin Pitch Impact on Biaxial/Uniaxial Strain Engineering of Triple-Gate Devices
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Fin Pitch Impact on Biaxial/Uniaxial Strain Engineering of Triple-Gate Devices

Rodrigues, Michele ; Sonnenberg, Victor ; Martino, Joao A. ; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor

ECS transactions, 2011, Vol.35 (5), p.151-156

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Analog Performance of SOI nFinFETs with Different TiN Gate Electrode Thickness
Analog Performance of SOI nFinFETs with Different TiN Gate Electrode Thickness
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Analog Performance of SOI nFinFETs with Different TiN Gate Electrode Thickness

Galeti, Milene ; Rodrigues, Michele ; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Martino, João A.

ECS transactions, 2010, Vol.31 (1), p.59-65

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9
Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique
Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique
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Analysis of the Interface Trap Density in SOI FinFETs with Different TiN Gate Electrode Thickness through Charge Pumping Technique

Rodrigues, Michele ; Cho, Moon ; Martino, João A. ; Collaert, Nadine ; Mercha, Abdelkarim ; Simoen, Eddy ; Claeys, Cor

ECS transactions, 2009, Vol.23 (1), p.559-565

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10
Gate Stack Influence on GIFBE in nFinFETs
Gate Stack Influence on GIFBE in nFinFETs
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Gate Stack Influence on GIFBE in nFinFETs

Martino, Joao A. ; Rodrigues, Michele ; Mercha, Abdelkarim ; Simoen, Eddy ; Veloso, Anabela ; Collaert, Nadine ; Jurczak, Malgorzata ; Claeys, Cor

ECS transactions, 2009, Vol.19 (4), p.133-138

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