Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Instantaneous companding of quantized signalsSmith, BernardBell System Technical Journal, 1957-05, Vol.36 (3), p.653-709 [Periódico revisado por pares]Oxford, UK: American Telephone and Telegraph CompanyTexto completo disponível |
2 |
Material Type: Artigo
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Cascade preprocessors for adaptive antennasWhite, W.I.R.E. transactions on antennas and propagation, 1976-09, Vol.24 (5), p.670-684 [Periódico revisado por pares]IEEETexto completo disponível |
3 |
Material Type: Artigo
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Josephson quantum interference computer devicesZappe, H.IEEE transactions on magnetics, 1977-01, Vol.13 (1), p.41-47IEEETexto completo disponível |
4 |
Material Type: Artigo
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PACMO: A Comprehensive CAD Package for Microwave DevicesFernandes, Humberto Cesar Chaves ; Giarola, Attilio Jose ; Rogers, David AnthonyIEEE transactions on education, 1983-01, Vol.26 (4), p.162-164 [Periódico revisado por pares]IEEETexto completo disponível |
5 |
Material Type: Artigo
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The Current Mode Fuzzy Logic Integrated Circuits Fabricated by the Standard CMOS ProcessYAMAKAWA, T ; MIKI, TIEEE transactions on computers, 1986-02, Vol.C-35 (2), p.161-167 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
6 |
Material Type: Artigo
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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistorsRuden, P.P. ; Shur, M. ; Akinwande, A.I. ; Nohava, J.C. ; Grider, D.E. ; Baek, J.IEEE transactions on electron devices, 1990-10, Vol.37 (10), p.2171-2175 [Periódico revisado por pares]IEEETexto completo disponível |
7 |
Material Type: Ata de Congresso
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COMPACTEST: A METHOD TO GENERATE COMPACT TEST SETS FOR COMBINATIONAL CIRCUITSPomeranz, I. ; Reddy, L.N. ; Reddy, S.M.1991, Proceedings. International Test Conference, 1991, p.194IEEETexto completo disponível |
8 |
Material Type: Artigo
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Pseudospark discharges via computer simulationBoeuf, J.-P. ; Pitchford, L.C.IEEE transactions on plasma science, 1991-04, Vol.19 (2), p.286-296 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
9 |
Material Type: Livro
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10 |
Material Type: Artigo
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Low-temperature (<or=550 degrees C) fabrication of poly-Si thin-film transistorsKing, T.-J. ; Saraswat, K.C.IEEE electron device letters, 1992-06, Vol.13 (6), p.309-311 [Periódico revisado por pares]NEW YORK: IEEETexto completo disponível |