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Refinado por: Base de dados/Biblioteca: Wiley-Blackwell Full Collection 2013 remover
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1
Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge
Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge
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Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge

Hsueh, Wei‐Jen ; Chiu, Pei‐Chin ; Hong, Ming‐Hwei ; Chyi, Jen‐Inn

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a [Periódico revisado por pares]

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2
Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
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Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Hus, Jui-Wei ; Chen, Chien-Chia ; Lee, Ming-Jui ; Liu, Hsueh-Hsing ; Chyi, Jen-Inn ; Huang, Michael R. S. ; Liu, Chuan-Pu ; Wei, Tzu-Chiao ; He, Jr-Hau ; Lai, Kun-Yu

Advanced materials (Weinheim), 2015-09, Vol.27 (33), p.4845-4850 [Periódico revisado por pares]

Germany: Blackwell Publishing Ltd

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3
Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements
Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements
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Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements

Liao, Wen-Chia ; Chyi, Jen-Inn ; Hsin, Yue-Ming

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1099-1103 [Periódico revisado por pares]

Weinheim: Blackwell Publishing Ltd

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4
A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time
A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time
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A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time

Hsin, Yue-Ming ; Ke, Tsung-Yu ; Lee, Geng-Yen ; Chyi, Jen-Inn ; Chiu, Hsien-Chin

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.949-952 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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5
Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx
Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx
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Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx

Chen, Wen-Yen ; Lai, Chi-Wen ; Cheng, Chao-Chia ; Chen, Cheng-Yu ; Chyi, Jen-Inn ; Hsu, Tzu-Min

Physica status solidi. C, 2012-02, Vol.9 (2), p.187-189 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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6
Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer
Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer
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Time-resolved photoluminescence of type-II InAs/GaAs quantum dots covered by a thin GaAs1-xSbx layer

Liao, Yu-An ; Hsu, Wei-Ting ; Lee, Ming-Chih ; Chiu, Pei-Chin ; Chyi, Jen-Inn ; Chang, Wen-Hao

Physica status solidi. C, 2009-06, Vol.6 (6), p.1449-1452 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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7
Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions
Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions
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Site-controlled InGaAs quantum dots grown on a GaAs multi-faceted microstructure for single photon emissions

Chang, Hsiang-Szu ; Hsu, Chieh-Ming ; Yang, Ming-Hui ; Hsieh, Tung-Po ; Chyi, Jen-Inn ; Hsu, Tzu-Min

Physica status solidi. C, 2008-07, Vol.5 (9), p.2713-2715 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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8
Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules
Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules
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Exciton fine structures and energy transfer in single InGaAs quantum-dot molecules

Lin, Hsuan ; Wang, Sheng-Yun ; Lin, Chia-Hsien ; Chang, Wen-Hao ; Cheng, Shun-Jen ; Lee, Ming-Chih ; Chen, Wen-Yen ; Hsu, Tzu-Min ; Hsieh, Tung-Po ; Chyi, Jen-Inn

Physica status solidi. C, 2009-04, Vol.6 (4), p.860-863 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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9
Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence
Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence
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Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Feng, Shih-Wei ; Pan, C. C. ; Chyi, Jen-Inn ; Kuo, Chien-Nan ; Chen, Kuei-Hsien

Physica status solidi. C, 2007-06, Vol.4 (7), p.2716-2719 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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10
Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures
Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures
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Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures

Feng, Shih-Wei ; Cheng, Yung-Chen ; Liao, Chi-Chih ; Chung, Yi-Yin ; Liu, Chih-Wen ; Yang, Chih-Chung ; Lin, Yen-Sheng ; Ma, Kung-Jeng ; Chyi, Jen-Inn

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.121-124 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag Berlin GmbH

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