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Refinado por: Nome da Publicação: Journal Of Crystal Growth remover
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1
Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy
Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy
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Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxy

Chen, Cheng-Yu ; Yang, Cheng-Yu ; Chyi, Jen-Inn ; Wu, Chih-Hung

Journal of crystal growth, 2013-09, Vol.378, p.180-183 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy
Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy
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Low resistivity and low compensation ratio Ga-doped ZnO films grown by plasma-assisted molecular beam epitaxy

Chen, Cheng-Yu ; Hsiao, Li-Han ; Chyi, Jen-Inn

Journal of crystal growth, 2015-09, Vol.425, p.216-220 [Periódico revisado por pares]

Elsevier B.V

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3
High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy
High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy
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High hole mobility InGaSb/AlSb QW field effect transistors grown on Si by molecular beam epitaxy

Chiu, Pei-Chin ; Huang, Hsuan-Wei ; Hsueh, Wei-Jen ; Hsin, Yu-Ming ; Chen, Cheng-Yu ; Chyi, Jen-Inn

Journal of crystal growth, 2015-09, Vol.425, p.385-388 [Periódico revisado por pares]

Elsevier B.V

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4
High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers
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High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

Liu, Wei-Sheng ; Wu, Hong-Ming ; Liao, Yu-Ann ; Chyi, Jen-Inn ; Chen, Wen-Yen ; Hsu, Tzu-Min

Journal of crystal growth, 2011-05, Vol.323 (1), p.164-166 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy
Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy
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Formation of self-organized In0.5Ga0.5As quantum dots on GaAs by molecular beam epitaxy

Chyi, Jen-Inn ; Nee, Tzer-En ; Lee, Ching-Ting ; Shieh, Jia-Lin ; Pan, Jen-Wei

Journal of crystal growth, 1997-05, Vol.175-176, p.777-781 [Periódico revisado por pares]

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6
1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition
1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition
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1.3 μm InAs/GaAs quantum dots directly capped with GaAs grown by metal-organic chemical vapor deposition

Huang, Kun-Fu ; Hsieh, Tung-Po ; Yeh, Nien-Tze ; Ho, Wen-Jeng ; Chyi, Jen-Inn ; Wu, Meng-Chyi

Journal of crystal growth, 2004-03, Vol.264 (1), p.128-133 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Improved electroluminescence of InAs quantum dots with strain reducing layer
Improved electroluminescence of InAs quantum dots with strain reducing layer
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Improved electroluminescence of InAs quantum dots with strain reducing layer

Yeh, Nien-Tze ; Nee, Tzer-En ; Chyi, Jen-Inn ; Chia, Chih-Ta ; Hsu, Tzu-Min ; Huang, Chien-Chi

Journal of crystal growth, 2001-07, Vol.227, p.1044-1048 [Periódico revisado por pares]

Elsevier B.V

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8
High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers
High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers
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High performance phosphorus-free 1.3 μm AlGaInAs/InP MQW lasers

Pan, Jen-Wei ; Chen, Ming-Hong ; Chyi, Jen-Inn

Journal of crystal growth, 1999-05, Vol.201, p.923-926 [Periódico revisado por pares]

Elsevier B.V

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9
Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices
Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices
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Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

Yeh, Nien-Tze ; Nee, Tzer-En ; Chyi, Jen-Inn

Journal of crystal growth, 1999-05, Vol.201-202, p.1168-1171 [Periódico revisado por pares]

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10
High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy
High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy
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High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Nee, Tzer-En ; Yeh, Nien-Tze ; Lee, Jia-Ming ; Chyi, Jen-Inn ; Lee, Ching-Ting

Journal of crystal growth, 1999-05, Vol.201-202, p.905-908 [Periódico revisado por pares]

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