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Refinado por: assunto: Physics, Condensed Matter remover
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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array
Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array
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Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Lee, Hsin-Ying ; Liu, Day-Shan ; Chyi, Jen-Inn ; Chang, Edward Yi ; Lee, Ching-Ting

Materials, 2021-09, Vol.14 (19), p.5474 [Periódico revisado por pares]

Basel: MDPI AG

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2
Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge
Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge
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Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge

Hsueh, Wei‐Jen ; Chiu, Pei‐Chin ; Hong, Ming‐Hwei ; Chyi, Jen‐Inn

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a [Periódico revisado por pares]

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3
Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si
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Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Hus, Jui-Wei ; Chen, Chien-Chia ; Lee, Ming-Jui ; Liu, Hsueh-Hsing ; Chyi, Jen-Inn ; Huang, Michael R. S. ; Liu, Chuan-Pu ; Wei, Tzu-Chiao ; He, Jr-Hau ; Lai, Kun-Yu

Advanced materials (Weinheim), 2015-09, Vol.27 (33), p.4845-4850 [Periódico revisado por pares]

Germany: Blackwell Publishing Ltd

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4
Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements
Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements
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Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements

Liao, Wen-Chia ; Chyi, Jen-Inn ; Hsin, Yue-Ming

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1099-1103 [Periódico revisado por pares]

Weinheim: Blackwell Publishing Ltd

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5
Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx
Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx
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Photomodulation reflectance study of temperature dependence of the band gap of ZnSe1-xOx

Chen, Wen-Yen ; Lai, Chi-Wen ; Cheng, Chao-Chia ; Chen, Cheng-Yu ; Chyi, Jen-Inn ; Hsu, Tzu-Min

Physica status solidi. C, 2012-02, Vol.9 (2), p.187-189 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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6
Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate
Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate
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Improved reverse recovery characteristics of inAlN/GaN schottky barrier diode using a SOI substrate

Chiu, Hsien-Chin ; Peng, Li-Yi ; Wang, Hsiang-Chun ; Kao, Hsuan-Ling ; Wang, Hou-Yu ; Chyi, Jen-Inn

Semiconductor science and technology, 2017-10, Vol.32 (10), p.105009 [Periódico revisado por pares]

IOP Publishing

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7
Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence
Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence
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Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Feng, Shih-Wei ; Pan, C. C. ; Chyi, Jen-Inn ; Kuo, Chien-Nan ; Chen, Kuei-Hsien

Physica status solidi. C, 2007-06, Vol.4 (7), p.2716-2719 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag

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8
The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells
The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells
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The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells

Feng, Shih-Wei ; Lin, Hung-Cheng ; Chyi, Jen-Inn ; Tsai, Chin-Yi ; Huang, C.J. ; Wang, Hsiang-Chen ; Yang, Fann-Wei ; Lin, Yen-Sheng

Thin solid films, 2011-07, Vol.519 (18), p.6092-6096 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions
Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions
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Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions

Feng, Shih-Wei ; Tu, Li-Wei ; Chyi, Jen-Inn ; Wang, Hsiang-Chen

Thin solid films, 2008-11, Vol.517 (2), p.909-915 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures
Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures
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Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures

Feng, Shih-Wei ; Cheng, Yung-Chen ; Liao, Chi-Chih ; Chung, Yi-Yin ; Liu, Chih-Wen ; Yang, Chih-Chung ; Lin, Yen-Sheng ; Ma, Kung-Jeng ; Chyi, Jen-Inn

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.121-124 [Periódico revisado por pares]

Berlin: WILEY-VCH Verlag Berlin GmbH

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