Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectraWu, L. Q. ; Li, S. Q. ; Li, Y. C. ; Li, Z. Z. ; Tang, G. D. ; Qi, W. H. ; Xue, L. C. ; Ding, L. L. ; Ge, X. S.Applied physics letters, 2016-01, Vol.108 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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12 |
Material Type: Artigo
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Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrateLi, Z. ; Waldron, J. ; Detchprohm, T. ; Wetzel, C. ; Karlicek, R. F. ; Chow, T. P.Applied physics letters, 2013-05, Vol.102 (19) [Periódico revisado por pares]Texto completo disponível |
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13 |
Material Type: Artigo
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On the importance of non-thermal far-field blooming in broad-area high-power laser diodesPiprek, Joachim ; Simon Li, Z. M.Applied physics letters, 2013-06, Vol.102 (22) [Periódico revisado por pares]Texto completo disponível |
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14 |
Material Type: Artigo
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Performance enhancement of TaOx resistive switching memory using graded oxygen contentWang, B. ; Xue, K. H. ; Sun, H. J. ; Li, Z. N. ; Wu, W. ; Yan, P. ; Liu, N. ; Tian, B. Y. ; Liu, X. X. ; Miao, X. S.Applied physics letters, 2018-10, Vol.113 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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15 |
Material Type: Artigo
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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodesLe, L. C. ; Zhao, D. G. ; Jiang, D. S. ; Li, L. ; Wu, L. L. ; Chen, P. ; Liu, Z. S. ; Li, Z. C. ; Fan, Y. M. ; Zhu, J. J. ; Wang, H. ; Zhang, S. M. ; Yang, H.Applied physics letters, 2012-12, Vol.101 (25) [Periódico revisado por pares]Texto completo disponível |
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16 |
Material Type: Artigo
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Effect of nonmagnetic substituent Zn on the phase competition and multiferroic properties in the polar magnet Fe2Mo3O8Wang, W. ; Li, P. Z. ; Chang, Y. T. ; Liu, M. F. ; Lu, C. L. ; Lu, X. B. ; Zeng, M. ; Liu, J.-M.Applied physics letters, 2021-03, Vol.118 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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17 |
Material Type: Artigo
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Assembly of uniaxially aligned rare-earth-free nanomagnetsBalamurugan, B. ; Das, B. ; Shah, V. R. ; Skomski, R. ; Li, X. Z. ; Sellmyer, D. J.Applied physics letters, 2012-09, Vol.101 (12) [Periódico revisado por pares]United StatesTexto completo disponível |
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18 |
Material Type: Artigo
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Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical dryingJoo, Jinmyoung ; Defforge, Thomas ; Loni, Armando ; Kim, Dokyoung ; Li, Z. Y. ; Sailor, Michael J. ; Gautier, Gael ; Canham, Leigh T.Applied physics letters, 2016-04, Vol.108 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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19 |
Material Type: Artigo
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Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectricsLefebvre, J. ; Ding, J. ; Li, Z. ; Cheng, F. ; Du, N. ; Malenfant, P. R. L.Applied physics letters, 2015-12, Vol.107 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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20 |
Material Type: Artigo
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Optimal number of quantum wells for blue InGaN/GaN light-emitting diodesXia, Chang Sheng ; Simon Li, Z. M. ; Li, Z. Q. ; Sheng, Yang ; Zhang, Zhi Hua ; Lu, Wei ; Cheng, Li WenApplied physics letters, 2012-06, Vol.100 (26), p.263504 [Periódico revisado por pares]Texto completo disponível |