skip to main content
Idioma:
previous page 1 Resultados 2 3 4 5 next page
Refinado por: Nome da Publicação: Applied Physics Letters remover
Result Number Material Type Add to My Shelf Action Record Details and Options
11
Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories
Material Type:
Artigo 		Adicionar ao Meu Espaço

Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

Gao, S. ; Chen, C. ; Zhai, Z. ; Liu, H. Y. ; Lin, Y. S. ; Li, S. Z. ; Lu, S. H. ; Wang, G. Y. ; Song, C. ; Zeng, F. ; Pan, F.

Applied physics letters, 2014-08, Vol.105 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
12
Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra
Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra
Material Type:
Artigo 		Adicionar ao Meu Espaço

Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectra

Wu, L. Q. ; Li, S. Q. ; Li, Y. C. ; Li, Z. Z. ; Tang, G. D. ; Qi, W. H. ; Xue, L. C. ; Ding, L. L. ; Ge, X. S.

Applied physics letters, 2016-01, Vol.108 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
13
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
Material Type:
Artigo 		Adicionar ao Meu Espaço

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Li, Z. ; Waldron, J. ; Detchprohm, T. ; Wetzel, C. ; Karlicek, R. F. ; Chow, T. P.

Applied physics letters, 2013-05, Vol.102 (19) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
14
On the importance of non-thermal far-field blooming in broad-area high-power laser diodes
On the importance of non-thermal far-field blooming in broad-area high-power laser diodes
Material Type:
Artigo 		Adicionar ao Meu Espaço

On the importance of non-thermal far-field blooming in broad-area high-power laser diodes

Piprek, Joachim ; Simon Li, Z. M.

Applied physics letters, 2013-06, Vol.102 (22) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
15
Performance enhancement of TaOx resistive switching memory using graded oxygen content
Performance enhancement of TaOx resistive switching memory using graded oxygen content
Material Type:
Artigo 		Adicionar ao Meu Espaço

Performance enhancement of TaOx resistive switching memory using graded oxygen content

Wang, B. ; Xue, K. H. ; Sun, H. J. ; Li, Z. N. ; Wu, W. ; Yan, P. ; Liu, N. ; Tian, B. Y. ; Liu, X. X. ; Miao, X. S.

Applied physics letters, 2018-10, Vol.113 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
16
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
Material Type:
Artigo 		Adicionar ao Meu Espaço

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

Le, L. C. ; Zhao, D. G. ; Jiang, D. S. ; Li, L. ; Wu, L. L. ; Chen, P. ; Liu, Z. S. ; Li, Z. C. ; Fan, Y. M. ; Zhu, J. J. ; Wang, H. ; Zhang, S. M. ; Yang, H.

Applied physics letters, 2012-12, Vol.101 (25) [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
17
Effect of nonmagnetic substituent Zn on the phase competition and multiferroic properties in the polar magnet Fe2Mo3O8
Effect of nonmagnetic substituent Zn on the phase competition and multiferroic properties in the polar magnet Fe2Mo3O8
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effect of nonmagnetic substituent Zn on the phase competition and multiferroic properties in the polar magnet Fe2Mo3O8

Wang, W. ; Li, P. Z. ; Chang, Y. T. ; Liu, M. F. ; Lu, C. L. ; Lu, X. B. ; Zeng, M. ; Liu, J.-M.

Applied physics letters, 2021-03, Vol.118 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
18
Assembly of uniaxially aligned rare-earth-free nanomagnets
Assembly of uniaxially aligned rare-earth-free nanomagnets
Material Type:
Artigo 		Adicionar ao Meu Espaço

Assembly of uniaxially aligned rare-earth-free nanomagnets

Balamurugan, B. ; Das, B. ; Shah, V. R. ; Skomski, R. ; Li, X. Z. ; Sellmyer, D. J.

Applied physics letters, 2012-09, Vol.101 (12) [Periódico revisado por pares]

United States

Texto completo disponível

Citações Citado por
19
Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying
Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying
Material Type:
Artigo 		Adicionar ao Meu Espaço

Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

Joo, Jinmyoung ; Defforge, Thomas ; Loni, Armando ; Kim, Dokyoung ; Li, Z. Y. ; Sailor, Michael J. ; Gautier, Gael ; Canham, Leigh T.

Applied physics letters, 2016-04, Vol.108 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
20
Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectrics
Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectrics
Material Type:
Artigo 		Adicionar ao Meu Espaço

Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectrics

Lefebvre, J. ; Ding, J. ; Li, Z. ; Cheng, F. ; Du, N. ; Malenfant, P. R. L.

Applied physics letters, 2015-12, Vol.107 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
previous page 1 Resultados 2 3 4 5 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.