Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Spin-wave focusing induced skyrmion generationWang, Zhenyu ; Li, Z.-X. ; Wang, Ruifang ; Liu, Bo ; Meng, Hao ; Cao, Yunshan ; Yan, PengApplied physics letters, 2020-11, Vol.117 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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The contribution of distinct response characteristics of Fe atoms to switching of magnetic anisotropy in Fe4N/MgO heterostructuresLi, Z. R. ; Mi, W. B. ; Bai, H. L.Applied physics letters, 2018-09, Vol.113 (13) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Half-metallicity in highly L21-ordered CoFeCrAl thin filmsJin, Y. ; Kharel, P. ; Valloppilly, S. R. ; Li, X.-Z. ; Kim, D. R. ; Zhao, G. J. ; Chen, T. Y. ; Choudhary, R. ; Kashyap, A. ; Skomski, R. ; Sellmyer, D. J.Applied physics letters, 2016-10, Vol.109 (14) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Electronic structure of a superconducting topological insulator Sr-doped Bi2Se3Han, C. Q. ; Li, H. ; Chen, W. J. ; Zhu, Fengfeng ; Yao, Meng-Yu ; Li, Z. J. ; Wang, M. ; Gao, Bo F. ; Guan, D. D. ; Liu, Canhua ; Gao, C. L. ; Qian, Dong ; Jia, Jin-FengApplied physics letters, 2015-10, Vol.107 (17) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodesSheng Xia, Chang ; Simon Li, Z. M. ; Sheng, YangApplied physics letters, 2013-12, Vol.103 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Effect of vacancies on thermoelectric properties of β-CuAgSe studied by positron annihilationGu, B. C. ; Li, Z. ; Liu, J. D. ; Zhang, H. J. ; Ye, B. J.Applied physics letters, 2019-11, Vol.115 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memoriesGao, S. ; Chen, C. ; Zhai, Z. ; Liu, H. Y. ; Lin, Y. S. ; Li, S. Z. ; Lu, S. H. ; Wang, G. Y. ; Song, C. ; Zeng, F. ; Pan, F.Applied physics letters, 2014-08, Vol.105 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Presence of monovalent oxygen anions in oxides demonstrated using X-ray photoelectron spectraWu, L. Q. ; Li, S. Q. ; Li, Y. C. ; Li, Z. Z. ; Tang, G. D. ; Qi, W. H. ; Xue, L. C. ; Ding, L. L. ; Ge, X. S.Applied physics letters, 2016-01, Vol.108 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Performance enhancement of TaOx resistive switching memory using graded oxygen contentWang, B. ; Xue, K. H. ; Sun, H. J. ; Li, Z. N. ; Wu, W. ; Yan, P. ; Liu, N. ; Tian, B. Y. ; Liu, X. X. ; Miao, X. S.Applied physics letters, 2018-10, Vol.113 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Effect of nonmagnetic substituent Zn on the phase competition and multiferroic properties in the polar magnet Fe2Mo3O8Wang, W. ; Li, P. Z. ; Chang, Y. T. ; Liu, M. F. ; Lu, C. L. ; Lu, X. B. ; Zeng, M. ; Liu, J.-M.Applied physics letters, 2021-03, Vol.118 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |