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Refinado por: Nome da Publicação: Journal Of Applied Physics remover assunto: Photoluminescence remover
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1
Investigation of the origin of deep levels in CdTe doped with Bi
Investigation of the origin of deep levels in CdTe doped with Bi
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Investigation of the origin of deep levels in CdTe doped with Bi

Saucedo, E. ; Franc, J. ; Elhadidy, H. ; Horodysky, P. ; Ruiz, C. M. ; Bermúdez, V. ; Sochinskii, N. V.

Journal of applied physics, 2008-05, Vol.103 (9), p.094901-094901-6 [Periódico revisado por pares]

United States: American Institute of Physics

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2
Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy
Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy
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Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

Wu, Shaoteng ; Wang, Liancheng ; Yi, Xiaoyan ; Liu, Zhiqiang ; Wei, Tongbo ; Yuan, Guodong ; Wang, Junxi ; Li, Jinmin

Journal of applied physics, 2017-11, Vol.122 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors
An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors
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An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors

Guo, Rongrong ; Xu, Yadong ; Wang, Tao ; Zha, Gangqiang ; Jie, Wanqi

Journal of applied physics, 2020-01, Vol.127 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures
A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures
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A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures

Jana, Dipankar ; Sharma, T. K.

Journal of applied physics, 2017-07, Vol.122 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Fabrication of TiO2 nanodot films using simple solution dipping method and block copolymer template
Fabrication of TiO2 nanodot films using simple solution dipping method and block copolymer template
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Fabrication of TiO2 nanodot films using simple solution dipping method and block copolymer template

Pandey, Krishna ; Perez, Marcos ; Korveziroska, Amelia ; Manna, Uttam ; Biswas, Mahua

Journal of applied physics, 2022-02, Vol.131 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2
Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2
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Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2

Sumiyoshi, Isshin ; Nose, Yoshitaro

Journal of applied physics, 2023-06, Vol.133 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Measurement and analysis of photoluminescence in GaN
Measurement and analysis of photoluminescence in GaN
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Measurement and analysis of photoluminescence in GaN

Reshchikov, Michael A.

Journal of applied physics, 2021-03, Vol.129 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states
Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states
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Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

Mullins, Jack ; Markevich, Vladimir P. ; Vaqueiro-Contreras, Michelle ; Grant, Nicholas E. ; Jensen, Leif ; Jabłoński, Jarosław ; Murphy, John D. ; Halsall, Matthew P. ; Peaker, Anthony R.

Journal of applied physics, 2018-07, Vol.124 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
On the structure and photoluminescence of dislocations in silicon
On the structure and photoluminescence of dislocations in silicon
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On the structure and photoluminescence of dislocations in silicon

Fedina, L. I. ; Gutakovskii, A. K. ; Shamirzaev, T. S.

Journal of applied physics, 2018-08, Vol.124 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes
Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes
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Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

Lee, In-Hwan ; Cho, Han-Su ; Bae, K. B. ; Polyakov, A. Y. ; Smirnov, N. B. ; Zinovyev, R. A. ; Baek, J. H. ; Chung, Tae-Hoon ; Shchemerov, I. V. ; Kondratyev, E. S. ; Pearton, S. J.

Journal of applied physics, 2017-01, Vol.121 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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