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Refinado por: Nome da Publicação: Journal Of Applied Physics remover assunto: Semiconductor Materials remover
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Deep levels by proton and electron irradiation in 4H-SiC
Deep levels by proton and electron irradiation in 4H-SiC
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Deep levels by proton and electron irradiation in 4H-SiC

Castaldini, Antonio ; Cavallini, Anna ; Rigutti, Lorenzo ; Nava, Filippo ; Ferrero, Sergio ; Giorgis, Fabrizio

Journal of applied physics, 2005-09, Vol.98 (5), p.053706-053706-6 [Periódico revisado por pares]

United States: American Institute of Physics

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2
Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies
Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies
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Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

Crocco, J. ; Bensalah, H. ; Zheng, Q. ; Corregidor, V. ; Avles, E. ; Castaldini, A. ; Fraboni, B. ; Cavalcoli, D. ; Cavallini, A. ; Vela, O. ; Dieguez, E.

Journal of applied physics, 2012-10, Vol.112 (7) [Periódico revisado por pares]

United States

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3
Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy
Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy
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Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy

Cavalcoli, Daniela ; Rossi, Marco ; Cavallini, Anna

Journal of applied physics, 2011-03, Vol.109 (5), p.053719-053719-6 [Periódico revisado por pares]

United States: American Institute of Physics

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4
Irradiation effects on the compensation of semi-insulating GaAs for particle detector applications
Irradiation effects on the compensation of semi-insulating GaAs for particle detector applications
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Irradiation effects on the compensation of semi-insulating GaAs for particle detector applications

Cavallini, Anna ; Polenta, Laura

Journal of applied physics, 2005-07, Vol.98 (2), p.023708-023708-5 [Periódico revisado por pares]

United States: American Institute of Physics

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5
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n -type 4H-SiC
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n -type 4H-SiC
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Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n -type 4H-SiC

Beyer, F. C. ; Hemmingsson, C. ; Pedersen, H. ; Henry, A. ; Janzén, E. ; Isoya, J. ; Morishita, N. ; Ohshima, T.

Journal of applied physics, 2011-05, Vol.109 (10), p.103703-103703-6 [Periódico revisado por pares]

United States: American Institute of Physics

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6
Investigation of the origin of deep levels in CdTe doped with Bi
Investigation of the origin of deep levels in CdTe doped with Bi
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Investigation of the origin of deep levels in CdTe doped with Bi

Saucedo, E. ; Franc, J. ; Elhadidy, H. ; Horodysky, P. ; Ruiz, C. M. ; Bermúdez, V. ; Sochinskii, N. V.

Journal of applied physics, 2008-05, Vol.103 (9), p.094901-094901-6 [Periódico revisado por pares]

United States: American Institute of Physics

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7
Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes
Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes
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Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

Wang, Y. ; Ali, G. N. ; Mikhov, M. K. ; Vaidyanathan, V. ; Skromme, B. J. ; Raghothamachar, B. ; Dudley, M.

Journal of applied physics, 2005-01, Vol.97 (1), p.013540-013540-10 [Periódico revisado por pares]

United States: American Institute of Physics

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8
Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy
Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy
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Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy

Luo, J. M. ; Zhong, Z. Q. ; Gong, M. ; Fung, S. ; Ling, C. C.

Journal of applied physics, 2009-03, Vol.105 (6), p.063711-063711-4 [Periódico revisado por pares]

United States: American Institute of Physics

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9
Large lattice relaxation deep levels in neutron-irradiated GaN
Large lattice relaxation deep levels in neutron-irradiated GaN
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Large lattice relaxation deep levels in neutron-irradiated GaN

Li, S. ; Zhang, J. D. ; Beling, C. D. ; Wang, K. ; Wang, R. X. ; Gong, M. ; Sarkar, C. K.

Journal of applied physics, 2005-11, Vol.98 (9), p.093517-093517-6 [Periódico revisado por pares]

United States: American Institute of Physics

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10
Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization
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Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization

Turkulets, Yury ; Shalish, Ilan

Journal of applied physics, 2018-08, Vol.124 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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